Fabrication method of lateral high voltage semiconductor device

Abstract

The invention provides a manufacturing method of a transverse high-voltage semiconductor device. The manufacturing method comprises the steps of forming second-conductive-type first ion implantation doped regions on the surface of a first-conductive-type substrate, wherein the distribution density of the first ion implantation doped region gradually reduces in a direction from the high-voltage end of the transverse high-voltage semiconductor device to the low-voltage end of the transverse high-voltage semiconductor device; performing first high-temperature treatment on the substrate so that the first ion implantation doped regions form a first diffusion region; forming an epitaxial layer on the substrate; and forming a second-conductive-type second diffusion region and a first-conductive-type third diffusion region on the surface layer of the epitaxial layer, wherein the third diffusion region is arranged at the low-voltage end, the second diffusion region covers the first diffusion region and extends from one side, which is next to the high-voltage end, of the third diffusion region to the high-voltage end, and the second conductive type is opposite to the first conductive type. The manufacturing method of the transverse high-voltage semiconductor device according to the invention prevents contradiction between breakdown voltage and on-resistance as possible.

Description

technical field [0001] The invention relates to semiconductor device technology, in particular to a method for manufacturing a lateral high-voltage semiconductor device. Background technique [0002] Lateral high-voltage semiconductor devices are commonly used in power integrated circuits, and their high-voltage terminals can withstand high potentials. The maximum voltage that the high-voltage terminals can withstand is called "breakdown voltage". When a lateral high-voltage semiconductor device is turned on, the impedance between the high-voltage terminal and the low-voltage terminal is called "on-resistance". For the same lateral high-voltage semiconductor device, the larger the breakdown voltage, the better, and the smaller the on-resistance. [0003] The lateral high-voltage semiconductor device includes a lateral double-diffused metal oxide transistor (Laterally Diffused Metal Oxide Semiconductor, LDMOS), a lateral insulated gate bipolar transistor (Lateral Insulated Ga...

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Problems solved by technology

[0005] The invention provides a method for manufacturing a lateral high-voltage semiconductor device to solve the problem in the prior art that when the breakdown voltage of a lateral high-voltage semiconductor device is increased, the on-resistance also increases

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