Etching method for inclined hole
A technology of oblique hole and etching gas, which is applied in the field of microelectronics, can solve the problems of line width loss at the top of the oblique hole, serious isotropic etching, long gas residence time, etc., achieve wireless width loss on the side wall, and avoid line width Loss, the effect of sidewall smoothing
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[0028] In order to enable those skilled in the art to better understand the technical solution of the present invention, the oblique hole etching method provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0029] The oblique hole etching method provided by the present invention includes the following steps: feeding etching gas and auxiliary gas into the reaction chamber, and turning on the excitation power supply (such as a radio frequency power supply), the excitation power supply is used to apply excitation power to the reaction chamber, so that The etching gas in the reaction chamber is excited to form plasma; the bias power supply is turned on, and the bias power supply is used to apply bias power to the silicon wafer, so that the plasma etches the silicon wafer until it forms on the surface of the silicon wafer to be etched. Slanted holes with a predetermined etch depth. In practical applications, inductively c...
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