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Broadband power equalizer with multilevel composite branch

A composite branch and equalizer technology, applied in power amplifiers, amplifiers, amplifier input/output impedance improvement and other directions, can solve problems such as deterioration of insertion loss and return loss, processing and assembly difficulties, etc., and achieve flexible branch structure. Power equalization range adjustment, adjustable frequency accurate effect

Inactive Publication Date: 2016-05-04
THE 41ST INST OF CHINA ELECTRONICS TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

figure 1 It is a structure of the traditional microstrip power equalizer in the prior art, including the main line of the transmission line and a plurality of branch nodes connected to the main line of the transmission line through thin film resistors. The conventional multi-twig microstrip power equalization technology can be realized on a wider frequency band However, with the increase of the bandwidth and the increase of the number of path stubs, the area of ​​the microstrip circuit increases, which not only deteriorates parameters such as insertion loss and return loss, but also brings great difficulties to processing and assembly.

Method used

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  • Broadband power equalizer with multilevel composite branch
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  • Broadband power equalizer with multilevel composite branch

Examples

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Embodiment 1

[0028] Such as figure 2 As shown, a broadband power equalizer with multi-level compound stubs in this embodiment includes a transmission line main line and a multi-level compound stub connected to the transmission line main line through a grade 1 thin film resistor, and the multi-level compound stubs include one 1 A first-level branch and a second-level branch, the second-level branch is connected to the first-level branch through a second-level thin film resistor; the first-level branch and the second-level branch adopt a single-node impedance conversion method. The sizes of the branches at all levels are calculated according to the principle of quarter-wavelength impedance matching and combined with optimization simulation, and the parameters of the thin film resistance are obtained through optimal design according to the need for amplitude equalization.

Embodiment 2

[0030] Such as image 3 As shown, a broadband power equalizer with multi-level compound stubs in this embodiment includes a transmission line main line and a multi-level compound stub connected to the transmission line main line through a grade 1 thin film resistor, and the multi-level compound stubs include one 1 The first-level branch and two second-level branches, the two second-level branches are respectively connected to the first-level branch through the second-level film resistor; the first-level branch adopts the way of multi-node impedance transformation, and the second-level branch adopts single-node impedance transformation The way. The sizes of the branches at all levels are calculated according to the principle of quarter-wavelength impedance matching and combined with optimization simulation, and the parameters of the thin film resistance are obtained through optimal design according to the need for amplitude equalization.

Embodiment 3

[0032] Such as Figure 4 As shown, a broadband power equalizer with multi-level compound stubs in this embodiment includes a transmission line main line and a multi-level compound stub connected to the transmission line main line through a grade 1 thin film resistor, and the multi-level compound stubs include two 1 A first-level branch and two second-level branches, the two second-level branches are respectively connected to two first-level branches through a second-level thin-film resistor. Both the first-level branch and the second-level branch adopt a single-node impedance conversion method. The sizes of the branches at all levels are calculated according to the principle of quarter-wavelength impedance matching and combined with optimization simulation, and the parameters of the thin film resistance are obtained through optimal design according to the need for amplitude equalization.

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Abstract

The invention relates to the technical field of power equalization, and in particular relates to a broadband power equalizer with a multilevel composite branch. The broadband power equalizer comprises a main transmission line and the multilevel composite branch connected with the main transmission line by a first-level thin-film resistor, wherein a next-level branch of the multilevel composite branch is connected with a previous-level branch by a next-level thin-film resistor, the multilevel composite branch number is one or more, and the number of levels of the multilevel composite branch and the quantity of the thin-film resistors can be increased or decreased according to requirements. The broadband power equalizer adopts the design of the multilevel composite branches, and has the numerous advantages of greatly improving power equalizing range, reducing microstrip circuit area, lowering machining and assembling difficulties, and optimizing insertion loss and echo loss parameters.

Description

technical field [0001] The invention relates to the technical field of power equalization, in particular to a broadband power equalizer with multi-level composite branches. Background technique [0002] In the field of microwave and millimeter wave solid-state power amplifiers, the power flatness of power amplifier chips is difficult to achieve a high level, especially for broadband power amplifiers, due to reasons such as matching technology and process control, the output power is more common The work stability and performance indicators have a certain impact. Insufficient power flatness index of the power amplifier may easily lead to excess or insufficient input of the pre-stage drive. Excessive input will lead to oversaturation of the final stage power amplifier, which may easily cause chip burnout. high power signal. Therefore, we need to use power equalization technology to compensate for the insufficient power flatness of the power amplifier. [0003] The developme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/24H03F1/56
CPCH03F3/24H03F1/56H03F2200/369
Inventor 王琦宁曰民刘金现朱伟峰齐红
Owner THE 41ST INST OF CHINA ELECTRONICS TECH GRP
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