Planar Schottky barrier diode

Abstract

A planar Schottky barrier diode comprises an N-type heavily-doped silicon substrate, an N-type light-doped epitaxial layer, a P-type heavily-doped loop region, a thin oxide layer, a field oxide layer, a Schottky barrier layer and multiple layers of metal and is characterized in that a P-type light-doped loop region is arranged in the N-type light-doped epitaxial layer outside the P-type heavily-doped loop region, the thin oxide layer is arranged on the P-type heavily-doped loop region and the P-type light-doped loop region, the field oxide layer is arranged on a part of the P-type light-doped loop region and on a part of the N-type light-doped epitaxial layer outside the P-type light-doped loop region, and the Schottky barrier layer is formed on a part of the P-type heavily-doped loop region and on a part of the N-type light-doped epitaxial layer. With the diode disclosed by the invention, the pressure resistant efficiency of the P-type heavily-doped loop region can be effectively improved, the surface field of a Schottkey barrier region can be further enhanced by reducing the junction depth of the P-type heavily-doped loop region, so that the lightning resistance ability of the planar Schottkey barrier is improved, the positive conducted voltage drop can be reduced, and the positive surge capability is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and is particularly suitable for silicon planar Schottky barrier diodes. More specifically, it relates to a planar Schottky barrier diode that can greatly improve the ability to resist lightning strikes and discharge static electricity. Background technique [0002] At present, power semiconductor devices play an irreplaceable role in the field of power conversion, especially power Schottky diodes, because they have extremely low forward voltage drop, nearly ideal reverse recovery characteristics, and better product consistency. Therefore, it has been widely recognized by the market. At the same time, with the improvement of people's environmental awareness and the sharp reduction of the unit price of solar cells, more and more units and individuals began to favor the purchase of solar cell components for daily production and daily power supply. Due to the changing working en...

AI Technical Summary

Problems solved by technology

This type of traditional Schottky diode either meets the requirements for electrostatic discharge capability, but cannot meet the requirements for lightning strike resistance and forward conduction voltage drop; or the lightning strike resistance and forward conduction voltage drop meet the indicators, but the electrostatic discharge capability does not meet the requirements

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