Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Trimming method and device of wafer parameter

A wafer and parameter technology, applied in the field of wafer parameter trimming methods and devices, can solve the problems of reduced trimming efficiency, long trimming time, and many trimming steps, and achieves improved trimming efficiency and trimming time. short effect

Active Publication Date: 2016-05-04
上海威伏半导体有限公司
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the trimming method of the above-mentioned wafer parameters needs to scan each file, and there are many trimming steps, and the trimming time is long, thereby reducing the trimming efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trimming method and device of wafer parameter
  • Trimming method and device of wafer parameter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be described in detail below in conjunction with accompanying drawing, as figure 1 As shown: the present embodiment provides a method for trimming wafer parameters including the following steps:

[0021] 101. Fit a linear formula according to the wafer parameter value and the wafer parameter gear value.

[0022] Wherein, the number of wafer parameter gears is greater than or equal to 2; the wafer parameters include the output frequency of the RC oscillator, the voltage output by the low dropout linear regulator, and the reference current.

[0023] Specifically, the linear formula includes: y=bx+a.

[0024] Wherein, b is a linear coefficient, a is a constant, x is a wafer parameter gear value, and y is a wafer parameter value.

[0025] It should be noted that the specific value of b can be determined according to actual needs and experience.

[0026] It should be noted that the above linear formula is applicable to the wafer parameter gear v...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a trimming method and device of a wafer parameter. The method comprises the following steps of fitting a linear formula according to a wafer parameter value and a wafer parameter shift value; measuring N(th) actual wafer parameter value; determining (N+1)th wafer parameter shift value according to the linear formula, the N(th) actual wafer parameter value, N(th) wafer parameter shift value and a target wafer parameter value; measuring (N+1)th actual wafer parameter value; determining (N+2)th wafer parameter shift value according to the linear formula, the (N+1) actual wafer parameter value, (N+1)th wafer parameter shift value and a target wafer numerical value; measuring (N+2)th actual wafer parameter value; determining whether an absolute value of the difference between the (N+2)th actual wafer numerical value and the target wafer numerical value is smaller than a first preset value or not; and determining a value of the (N+2)th wafer parameter shift value after rounding as the target wafer parameter shift value when the absolute value is smaller than the first preset value. The trimming time is short, and the trimming efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of wafer manufacturing, in particular to a method and device for adjusting wafer parameters. Background technique [0002] During the wafer manufacturing process, due to the discreteness of the manufacturing process, the consistency of the key parameters of the wafer cannot be guaranteed. In view of this, when manufacturing the wafer, each key parameter is usually made into multiple files. Then, in the later stage of wafer testing, the closest gear to the target parameter is determined among the multiple gears of each key parameter, which is the trimming of the wafer parameters. [0003] In the prior art, the scanning method is usually used to realize the trimming of wafer parameters. If the parameter to be trimmed is the output frequency of the internal RC oscillator, and the output frequency of the internal RC oscillator is made at 256 levels, when trimming , need to scan from the first file to the 256th ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/20
Inventor 徐四九郑东来
Owner 上海威伏半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com