Magnetooptical material, manufacturing method therefor, and magnetooptical device

A technology of magneto-optical materials and manufacturing methods, which is applied in the growth of polycrystalline materials, chemical instruments and methods, optics, etc., and can solve problems such as difficulty in utilizing optical isolators

Active Publication Date: 2016-04-27
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, iron (Fe) has a large light absorption at a wavelength of 0.9 μm, and the influence of this light absorption appears on the optical isolator in the wavelength range of 0.9 to 1.1 μm
Therefore, it has become extremely difficult to use an optical isolator using this yttrium iron garnet single crystal in a fiber laser device that tends to increase output significantly.

Method used

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  • Magnetooptical material, manufacturing method therefor, and magnetooptical device
  • Magnetooptical material, manufacturing method therefor, and magnetooptical device
  • Magnetooptical material, manufacturing method therefor, and magnetooptical device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0110] [Example 1, Comparative Example 1]

[0111] As an example in which a single element is filled at the B site (R in the above formula (1)) in the above formula (1), an example in which hafnium, tin, titanium, and zirconium are selected will be described.

[0112] Terbium oxide powder from Shin-Etsu Chemical Co., Ltd., hafnium oxide powder from American Elements Co., Ltd., tin oxide powder and titanium oxide powder from High Purity Chemical Research Institute Co., Ltd., and Nissan Chemical Industry Co., Ltd. Zirconia powder. All have a purity of 99.9% by mass or higher.

[0113] Using the above raw materials, Tb 2 f 2 o 7 , Tb 2 sn 2 o 7 , Tb 2 Ti 2 o 7 , Tb 2 Zr 2 o 7 4 kinds of pyrochlore-type oxide raw materials. That is, prepare a mixed powder in which terbium oxide and hafnium oxide are weighed so that terbium and hafnium become an equimolar ratio, a mixed powder in which terbium oxide and tin oxide are weighed so that terbium and tin become an equimolar...

Embodiment 2

[0175] [Example 2, Comparative Example 2]

[0176] An example in which at least one element selected from silicon, germanium, titanium, tantalum, and tin is filled at the B site in the above formula (1) so as to have a composition other than the composition of Example 1 will be described.

[0177] Terbium oxide powder manufactured by Shin-Etsu Chemical Co., Ltd., silicon dioxide powder, germanium dioxide powder, titanium oxide powder, tin oxide powder manufactured by Shin-Etsu Chemical Co., Ltd. of tantalum pentoxide. All have a purity of 99.9% by mass or more.

[0178] Using the above raw materials, various composite oxide raw materials were produced. That is, prepare to weigh terbium oxide, silicon dioxide, and zirconia so that the molar ratio of terbium, silicon, and zirconium becomes a mixed powder of 2:1:1, and weigh terbium oxide, germanium dioxide, and zirconia so that terbium, germanium, and The molar ratio of zirconium and zirconium is 2:1:1 mixed powder, weigh ter...

Embodiment 3

[0190] Another example in which hafnium and zirconium are selected as the B site in the above formula (1) will be described.

[0191] Terbium oxide powder manufactured by Shin-Etsu Chemical Co., Ltd., hafnium oxide powder manufactured by American Elements Corporation, and zirconia powder manufactured by Nissan Chemical Industry Co., Ltd. were obtained. All have a purity of 99.9% by mass or more.

[0192] Using the above raw materials, Tb 2 f 2 o 7 , Tb 2 Zr 2 o 7 2 kinds of pyrochlore-type oxide raw materials. That is, two kinds of mixed powders were prepared, namely, a mixed powder in which terbium oxide and hafnium oxide were weighed so that terbium and hafnium had an equimolar ratio, and a mixed powder in which terbium oxide and zirconia were weighed so that terbium and zirconium had an equimolar ratio. Next, dispersion / mixing treatment was carried out in ethanol using a zirconia ball mill apparatus while being careful not to mix with each other. Processing time is ...

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Abstract

This invention provides a transparent magnetooptical material that is suitable for use in a magnetooptical device such as an optical isolator. Said magnetooptical material comprises either a transparent ceramic consisting primarily of a complex oxide that can be represented by formula (1) or a single crystal of such a complex oxide. Said magnetooptical material does not absorb fiber-laser light in the 0.9-1.1 mum wavelength range, does not cause heat lensing, and has a higher Verdet constant than TGG crystals, with a Verdet constant of at least 0.14 min / (Oe.cm) at a wavelength of 1,064 nm. (1) Tb2R2O7 (In formula (1), R represents one or more elements selected from among the group consisting of silicon, germanium, titanium, tantalum, tin, hafnium, and zirconium (but not silicon only, germanium only, or tantalum only)).

Description

technical field [0001] The present invention relates to a magneto-optical material and a magneto-optical device, and more specifically, to a magneto-optical material containing transparent ceramics or single crystals containing complex oxides, a method for manufacturing the same, and a method for using the same. A magneto-optical device based on the magneto-optic material. Background technique [0002] In recent years, higher output has become possible, and the spread of laser processing machines using fiber lasers has been remarkable. When external light enters a laser light source incorporated in a laser processing machine, the resonance state becomes unstable and the oscillation state is disturbed. In particular, if the oscillating light is reflected by an intermediate optical system and returns to the light source, the oscillating state is greatly disturbed. In order to prevent this, an optical isolator is usually placed in front of the light source or the like. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B27/28C30B29/22C30B29/32G02F1/09
CPCC30B29/22C30B29/32G02F1/09C30B1/12C30B29/30G02F1/093C04B35/01C04B35/16C04B35/457C04B35/462C04B35/486C04B35/495C04B35/6261C04B35/6455C04B2235/3218C04B2235/3224C04B2235/3244C04B2235/3251C04B2235/3287C04B2235/3293C04B2235/3418C04B2235/5436C04B2235/6567C04B2235/661C04B2235/762C04B2235/77C04B2235/786C04B2235/80C04B2235/81C04B2235/9646C04B2235/9653G02F1/0036
Inventor 碇真宪
Owner SHIN ETSU CHEM CO LTD
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