Substrate processing method, substrate processing apparatus, method for manufacturing semiconductor device, and recording medium

Abstract

This substrate processing method comprises: a step wherein a substrate, which is provided with a prebaked film that has a silazane bond, is carried into a process chamber; a modification step wherein the substrate is heated to a first temperature and a processing gas is supplied to the substrate; and a drying step wherein the substrate is heated at a second temperature that is higher than the first temperature but not higher than the temperature of the prebaking.

Description

technical field [0001] The present invention relates to a substrate processing method, a substrate processing device, a manufacturing method of a semiconductor device, and a recording medium. Background technique [0002] With the miniaturization of Large Scale Integrated Circuit (hereinafter referred to as LSI), the processing technology for controlling leakage current interference between transistor elements has increased technical difficulty. LSI element-to-element isolation is performed by forming spaces such as grooves or holes between adjacent elements to be separated on silicon (Si) as a substrate, and depositing an insulator in the spaces. As an insulator, an oxide film is often used, for example, a silicon oxide film (SiO film). The SiO film can be formed by oxidation of the Si substrate itself, chemical vapor deposition (Chemical Vapor Deposition: CVD method), insulator coating method (Spin On Dielectric: SOD method), or the like. [0003] Due to miniaturization ...

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Problems solved by technology

[0003] Due to miniaturization in recent years, there is a technical limit to the embedding method by CVD method when embedding oxide into a microstructure, especially when embedding oxide into a vertically deep or laterally narrow void structure.

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