Ferroelectric/semiconductor/PMMA ternary composite resistive film with high electrical stability and preparation method thereof

A ternary composite, resistive thin film technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of the decline in yield of composite resistive memory structures, the electrical instability of organic semiconductors, and the weakening of device resistive characteristics. and other problems, to achieve the effect of improving breakdown resistance, high electrical stability, and improving stability and reliability

Inactive Publication Date: 2016-04-20
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the semiconductor phase and the ferroelectric phase form a phase-separated structure during the solution film formation process, the surface of the composite film prepared by the spin-coating process is extremely rough, and its surface roughness is equivalent to the thickness of the film, resulting in increased leakage of the device , which weakens the resistive switching characteristics of the device, resulting in a decrease in the yield of the composite resistive switching memory structure
Moreover, due to the electrical instability of the organic semiconductor itself, after the ferroelectric / semiconductor resistive switching device undergoes repeated write / erase operations, the semiconductor phase is broken down, and the device loses resistive switching performance.

Method used

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  • Ferroelectric/semiconductor/PMMA ternary composite resistive film with high electrical stability and preparation method thereof
  • Ferroelectric/semiconductor/PMMA ternary composite resistive film with high electrical stability and preparation method thereof

Examples

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Effect test

Embodiment 1

[0016] This example illustrates the optimum PMMA doping amount.

[0017] Prepare the PMMA / P3HT / P(VDF-TrFE) composite film according to the preparation process of the ternary composite resistive film in the summary of the invention, wherein when configuring the tetrahydrofuran solution, keep the mass percentage of P(VDF-TrFE) as 3%, PMMA: The P3HT:P(VDF-TrFE) mass ratio is x:1:10, where x is a variable between 0 and 0.5.

[0018] The root mean square surface roughness of the film was measured by atomic force microscope, the results are as follows figure 1 As shown in (a), it can be seen that with the increase of PMMA doping amount (x from 0 to 0.5), the surface roughness of the film is significantly reduced, which helps to reduce the leakage current of the device.

[0019] Figures (b) to (d) show the resistive characteristic curves obtained when x=0, 0.2 and 0.5 respectively. When x=0 (Figure b), when the positive and negative bias voltage amplitude is 40V, an obvious butterf...

Embodiment 2

[0022] This example illustrates that after optimizing the doping amount of PMMA, the resistance state retention performance of the obtained thin film is also significantly improved.

[0023] Prepare the PMMA / P3HT / P(VDF-TrFE) composite film according to the preparation process of the ternary composite resistive film in the summary of the invention, wherein when configuring the tetrahydrofuran solution, keep the mass percentage of P(VDF-TrFE) as 3%, PMMA: The mass ratio of P3HT:P(VDF-TrFE) is x:1:10, and x is 0 (corresponding to no PMMA doping) or 0.2 (corresponding to optimized PMMA doping amount).

[0024] figure 2 (a) shows the change of on-state and off-state current with time. Compared with the case without PMMA doping (x=0), after PMMA doping (x=0.2), the leakage current of the film is effectively suppressed, The obtained on-state current and off-state current are lower than those obtained without PMMA doping. figure 2 (b) shows the ratio of the on-state current to the...

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Abstract

The invention belongs to the technical field of resistive random access memories, and specifically relates to a ferroelectric / semiconductor / PMMA ternary composite resistive film with high electrical stability and a preparation method thereof. The ternary composite resistive film is obtained by doping polymethylmethacrylate (PMMA) in a ferroelectric / semiconductor composite film, and the mass ratio of the doped PMMA to ferroelectric polymer is 0.1:10 to 0.3:10. The surface roughness, anti-electric fatigue property and resistance state maintaining performance of the ternary composite film are improved obviously. As the mutual solubility of PMMA and ferroelectric polymer P(VDF-TrFE) is good, the leakage characteristic of ferroelectric phase can be reduced effectively. PMMA and an organic semiconductor, such as P3HT, form a lamellar phase separation structure, which can inhibit the leakage of semiconductor phase effectively, and reduce the risk of semiconductor phase electric breakdown.

Description

technical field [0001] The invention belongs to the technical field of resistive memory, and in particular relates to a ferroelectric / semiconductor composite resistive thin film and a preparation method thereof. Background technique [0002] Resistive memory has the characteristics of simple structure, fast read and write speed, low manufacturing cost, excellent device scaling performance, and good compatibility with semiconductor processes. It has attracted extensive attention from academia and industry, and is expected to become the direction of future storage technology development. . The organic semiconductor / ferroelectric composite structure is a simple process for preparing resistive memory because of its electrical bistable and rectifying properties. Here, the ferroelectric polymer is generally a copolymer P(VDF-TrFE) of vinylidene fluoride and trifluoroethylene, and the organic semiconductor material can be poly(3-hexylthiophene-2,5-diyl) (P3HT), poly [(9,9-Di-n-oc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K71/12H10K85/00H10K10/50
Inventor 朱国栋
Owner FUDAN UNIV
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