Semiconductor capacitor based on through-silicon via technology and manufacturing method and packaging structure thereof

Abstract

The invention discloses a semiconductor capacitor based on the through-silicon via technology and a manufacturing method and a packaging structure thereof. The semiconductor capacitor comprises metal-insulation dielectric layer laminated structures formed by multiple metal layers and insulation dielectric layers in a repeated mode, the metal layers in even layers are electrically connected, and the metal layers in odd layers are electrically connected; each laminated structure is provided with a substrate, and a bottom electrode metal column penetrates through each substrate. Compared with the prior art, the electrode area of the capacitor formed in a laminated mode is increased on the condition that the occupation area is not enlarged, so that the capacitance value is improved, and the cost is saved; two electrodes of the metal-insulation-metal capacitor can be guided by metal above the substrates and metal below the substrates respectively, the capacitor can be electrically connected with different external circuits (such as an integrated circuit chip and a PCB) through the 3D packaging technology, miniaturization encapsulation can be achieved, and the parasitic effect is reduced.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor capacitors, in particular to a semiconductor capacitor based on through-silicon via technology and a manufacturing method thereof. Background technique [0002] Capacitive components are often used in integrated circuits as electronic passive devices, with functions such as energy storage, filtering, and DC blocking, and are one of the widely used components. At present, common capacitor structures in the semiconductor process include metal oxide semiconductor (MOS) capacitors, PN junction capacitors, and metal-insulator-metal (MIM) capacitors. However, the capacitance value per unit area of ​​this type of capacitor is low, such as the MIM capacitor is about 2fF / μm 2 ,, Therefore, if you want to obtain a capacitor with a larger capacity (such as above 10PF), you need to occupy a very large chip area, which increases the cost of the chip. For example, chip capacitors in discre...

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Problems solved by technology

However, the capacitance value per unit area of ​​this type of capacitor is low, such as the MIM capacitor is about 2fF / μm 2 ,, Therefore, if you want to obtain a capacitor with a larger capacity (such as above 10PF), you need to occupy a very large chip area, which increases the cost of the chip

For example, chip capacitors in discrete devices often use a multi-layer interdigitated electrode structure, which can have a large capacitance, but is large in size, incompatible with semiconductor processes, and inconvenient for miniaturized packaging with integrated circuit chips.

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