Low-resistivity P type gallium nitride material and preparation method thereof

A low-resistivity, gallium nitride technology, used in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., to reduce the effect of acceptor compensation, reduce resistivity, reduce series resistance and turn-on voltage

Active Publication Date: 2016-04-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, our recent study found that, in addition to forming complexes with Mg, hydrogen may also combine with common defects, such as nitrogen vacancies.

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  • Low-resistivity P type gallium nitride material and preparation method thereof
  • Low-resistivity P type gallium nitride material and preparation method thereof

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Embodiment Construction

[0015] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0016] figure 1 A schematic structural view of a low-resistivity P-type gallium nitride material proposed by the present invention is shown. Such as figure 1 As shown, the low-resistivity P-type GaN material sequentially includes a substrate 10, a low-temperature nucleation layer 11, an unintentionally doped template layer 12, and a low-temperature grown P-type GaN with a certain hydrogen impurity concentration from bottom to top. Layer 13. Wherein: the substrate 10 is a sapphire substrate or a silicon carbide substrate or a gallium nitride substrate. The low-temperature nucleation layer 11 is fabricated on the substrate 10, its material is gallium nitride or aluminum nitride, the growth temperature is 500-600°C, and t...

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Abstract

The invention discloses a low-resistivity P type gallium nitride material and a preparation method thereof. The preparation method comprises the following steps that: a substrate is heated, heat treatment is performed on the substrate under a hydrogen environment, so that impurities of the surface of the substrate can be removed; a low-temperature nucleating layer is grown on the substrate so as to provide a nucleation center for subsequent material growth; a non-intentionally-doped template layer is grown on the low-temperature nucleating layer; a P type gallium nitride layer with a certain hydrogen impurity concentration is grown on the non-intentionally-doped template layer through low-temperature epitaxial growth; under a nitrogen environment, high-temperature annealing is carried out, so that an acceptor in the P type gallium nitride layer is activated, so that the low-resistivity P type gallium nitride material can be obtained. According to the method of the invention, hydrogen impurities and donor defects (such as nitrogen vacancies) form complexes, so that donor defects can be passivated, and therefore, an acceptor compensation effect in the P type gallium nitride material can be reduced, and the resistivity of the P type gallium nitride material can be decreased.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a low-resistivity P-type gallium nitride material and a preparation method thereof. Background technique [0002] Blue-green light-emitting diodes (LEDs) have extremely important applications in the fields of display, control and communication, and have become an indispensable component in current full-color displays and traffic signal signs. Blu-ray laser diodes (LDs) are used in high-density storage discs to increase the storage density by nearly four times compared with red laser diodes, which can better meet the needs of the information age. In addition, blue laser diodes also have great application value in medical diagnosis and submarine exploration. [0003] However, in order to obtain a longer luminous wavelength, the active regions of blue-green LEDs and LDs adopt a multiple quantum well structure with a relatively high indium composition (gen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L33/00H01L33/32
CPCH01L21/0254H01L21/02664H01L33/0075H01L33/32
Inventor 杨静赵德刚陈平朱建军
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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