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IGBT device and fabrication method thereof

A manufacturing method and device technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effects of improving capacitance, improving stability, and realizing electron injection enhancement effect.

Active Publication Date: 2016-04-13
HANGZHOU SILAN INTEGRATED CIRCUIT
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0007] The object of the present invention is to provide a kind of IGBT device and manufacturing method thereof, to solve existing technical problems

Method used

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  • IGBT device and fabrication method thereof
  • IGBT device and fabrication method thereof
  • IGBT device and fabrication method thereof

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Embodiment Construction

[0056] As mentioned in the background technology, in order to realize the electron injection enhancement effect (IE effect), the traditional planar gate structure IEGT requires a long polycrystalline gate length, resulting in a low cell density and a large device area. Although the structure can increase the device cell density and eliminate the JFET effect, it will increase the gate capacitance and affect the switching speed and turn-off loss. For this reason, the composite gate structure is adopted in the IGBT device of the present invention, and the composite gate structure includes a planar gate formed on the front surface of the semiconductor substrate and a trench gate formed in the front surface of the semiconductor substrate. The slot gate can increase the effective length of the gate of the IGBT device, so the purpose of enhancing the effect of electron injection can be achieved while reducing the length of the planar gate and reducing the size of the cell. In additio...

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Abstract

The invention provides an IGBT device and a fabrication method thereof. A composite gate structure is adopted by the IGBT device; the composite gate structure comprises a plane gate and a trench gate; the plane gate is formed on the front surface of a semiconductor substrate; the trench gate is formed in the front surface of the semiconductor substrate; and the trench gate can increase an effective length of a gate of the IGBT device, so that the target of achieving an electron injection enhancement effect can be achieved under the condition of reducing the length of the plane gate and reducing the cell dimension. Furthermore, according to the IGBT device, an auxiliary trench gate is added to a P well region, so that holes can be accumulated at the bottom part and the side walls of the auxiliary trench gate; and the electron injection enhancement effect at the lower part of the P well region is strengthened. Meanwhile, the auxiliary trench gate is electrically connected with an emitter metal electrode, so that the capacitance between an emitter and a collector of the IGBT device can be effectively improved; and the stability of the device is improved.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to an IGBT device and a manufacturing method thereof. Background technique [0002] The insulated gate bipolar transistor (InsulatedGateBipolarTransistor, referred to as IGBT) is a composite fully controlled voltage composed of a bipolar transistor (BipolarJunctionTransistor, referred to as BJT) and an insulated gate field effect transistor (Metal-Oxide-SemiconductorField-EffectTransistor, referred to as MOSFET). Driven power semiconductor devices have both the advantages of high input impedance of MOSFET devices and low conduction voltage drop of BJT devices. Because IGBT has the advantages of small driving power and low saturation voltage, it is widely used in various fields as a new type of power electronic device. For example, IGBT has a wide range of applications in switching power supplies, rectifiers, inverters, UPS and other fields. . [0003] The saturation volt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/739H01L21/331H01L21/28
CPCH01L29/4236H01L29/66348H01L29/7397H01L29/7398
Inventor 韩健顾悦吉黄示陈琛
Owner HANGZHOU SILAN INTEGRATED CIRCUIT
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