An electron bombardment solid-state photomultiplier tube type low-light digital image sensor

A photomultiplier tube, digital image technology, applied in the direction of image communication, television, electrical components, etc., can solve the problems of inability to realize gating working mode, no electronic shutter function, large sensor power consumption, etc., and achieve high time resolution capability, The effect of light weight and fast frame transfer rates

Active Publication Date: 2018-06-26
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this kind of sensor consumes a lot of power and has no electronic shutter function, so it cannot realize the strobe working mode.

Method used

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  • An electron bombardment solid-state photomultiplier tube type low-light digital image sensor
  • An electron bombardment solid-state photomultiplier tube type low-light digital image sensor
  • An electron bombardment solid-state photomultiplier tube type low-light digital image sensor

Examples

Experimental program
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Embodiment Construction

[0033] Recently, a new type of photodetection device, the solid-state photomultiplier tube, has gradually attracted attention. For specific technologies, please refer to documents such as Nuclear Instruments and Methods in Physics Research A 567 (2006) 48-56. The solid-state photomultiplier tube consists of an array of hundreds or thousands of avalanche diodes operating in Geiger mode, and each avalanche diode cell is connected in series with a quenching resistor. In the case of reverse voltage bias, the depletion layer of each microcell has a high electric field. When the incident photon hits the microcell area, electron-hole pairs are generated inside the semiconductor. These electrons and holes are in the Under the action of the electric field, more secondary electrons and holes will be generated, resulting in an avalanche effect. At this time, the current in each micro-element circuit increases, forming a large voltage drop on the quenching resistor, and outputting an inst...

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Abstract

The invention discloses an electron bombardment solid-state photomultiplier tube low-light digital image sensor. The sensor includes an input terminal, a tube shell, a photocathode, a solid-state photomultiplier tube and a readout circuit board; the input terminal is provided with an incident window, and the incident window is provided with a photocathode, and the photocathode converts incident photons into Photoelectrons, under the action of high-voltage acceleration, photoelectrons directly bombard the solid-state photomultiplier tube to convert optical signals into electrical signals and amplify them, and the output signals are digitized to form images. The electronic bombardment solid-state photomultiplier tube low-light digital image sensor has a series of advantages such as high gain, high sensitivity, high temporal and spatial resolution, large dynamic range, low noise, small size, light weight, long life, and high reliability. Photon imaging and extremely weak target tracking and detection have important application values ​​in the fields of living bioluminescent imaging, lidar technology, and helmet night vision systems.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to an electron bombardment solid-state photomultiplier tube low-light digital image sensor. Background technique [0002] Low-light image sensors have important applications in the fields of living bioluminescent imaging, lidar technology, and helmet night vision systems. Whether it is in the field of scientific research or in the field of military applications, an ideal image sensor needs to have high imaging quality and high temporal and spatial resolution in a large illuminance range, and at the same time should have low energy consumption, small size, light weight, and portability. , high reliability and long life. [0003] Traditional CCD or CMOS devices have limited sensitivity and cannot be used in weak light conditions. The subsequently developed low-light image sensors include enhanced CCD (I CCD), electron bombardment CCD (EBCCD), electron bombardment CMOS...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/335H04N5/378
CPCH04N25/00H04N25/75
Inventor 王兴田进寿白永林
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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