A method for determining the amount of pulsed laser etching of materials based on chemical reactions

Abstract

A method for determining the amount of material pulsed laser etching based on chemical reactions. For materials whose chemical reaction speed is greater than 8×104mol m-3 s-1 at the thermal decomposition temperature, according to the actual chemical reaction speed of the material, using the collision theory, And use the Gibbs free energy of the chemical reaction to replace the activation energy to determine the chemical reaction speed, convert the unit of the obtained chemical reaction speed to obtain the chemical reaction speed length ratio at different temperatures, calculate the temperature distribution of the material under different laser parameters, and obtain the temperature distribution from the surface of the material to The calculation formula of the reaction unit length of the matrix assumes that the velocity is equal everywhere in the reaction volume, and the relational expression between the etching velocity of the surface material matrix and the temperature field of the material is obtained. The present invention uses the thermochemical reaction angle to study the interaction between the laser and the material. The length of the reaction unit solves the problem of difficult characterization of the chemical reaction speed, and obtains a more realistic temperature field and etching amount on the material surface.

Description

technical field [0001] The invention belongs to the technical field of laser processing, and in particular relates to a method for determining a material pulse laser etching amount based on a chemical reaction. Background technique [0002] Laser processing technology is to use the characteristics of the interaction between the laser beam and the material to cut, weld, surface treat, drill and micro-process the material. With the refinement of laser processing, it is necessary to strictly control the amount of material etched under the action of laser. In order to better guide the development of the process, the theory of laser processing is also developing rapidly. In traditional laser etching processing, if the pulse width is nanoscale or even longer, the physical process of phase-changing gas under the action of laser heat and detaching from the substrate is commonly used to determine the amount of material etched. . [0003] Considering that some materials are not onl...

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Problems solved by technology

[0003] Considering that some materials are not only phase change at high temperature, but more of high temperature thermal decomposition, such as some ceramic materials, therefore, the interaction between this material and laser cannot be considered from the perspective of phase change

The current common method is to set the decomposition temperature. If the surface temperature of the material is higher than the thermal decomposition temperature, the material is considered to be etched away. However, the chemical reaction has a certain reaction speed, and there is a limit to setting the etching critical temperature to a fixed value.

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