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A kind of algainp semiconductor laser containing highly selective etching barrier layer

A technology of corrosion barrier layer and high selectivity, which is applied in the field of AlGaInP semiconductor lasers, can solve the problems of output light mode change, corrosion selectivity reduction, atom mixing, etc., achieve stable light output mode, increase corrosion selectivity ratio, and smooth corrosion surface Effect

Active Publication Date: 2019-06-18
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the quantum well is mixed, the corrosion barrier layer will also have atomic mixing, so that the Ga element in the corrosion barrier layer will decrease, the Al element will increase, and the corrosion selectivity will decrease.
like Figure 2a As shown, in the process of ridge fabrication, there will be a phenomenon that the etching depth of the device window area and the gain area are inconsistent, resulting in a difference in refractive index and a change in the output light mode.

Method used

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  • A kind of algainp semiconductor laser containing highly selective etching barrier layer
  • A kind of algainp semiconductor laser containing highly selective etching barrier layer

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Embodiment 1

[0026] An AlGaInP semiconductor laser containing a highly selective corrosion barrier layer, comprising a substrate 1, a lower cladding layer 2, an active region 3, a first upper cladding layer 4, an corrosion barrier layer 5, and a second upper cladding layer from bottom to top. layer 6 and ohmic contact layer 7; the corrosion barrier layer 5 is arranged sequentially from bottom to top (Al a Ga 1-a ) 0.5 In 0.5 P, Ga b In 1-b P and (Al a Ga 1-a ) 0.5 In 0.5 P three-layer structure, the range of thickness of each layer is 5-15nm, wherein, the value of a is 0.1-0.5, and the value of b is 0.5-0.7; the active region 3 is arranged in sequence from bottom to top (Al x Ga 1-x ) 0.5 In 0.5 P barrier layer, Ga y In 1-y P quantum well and (Al x Ga 1-x ) 0.5 In 0.5 P barrier layer, wherein, the value of x is 0.4-0.6, and the value of y is 0.4-0.6; and the values ​​of b and y satisfy the condition: b>y. The lasing wavelength of the active region is about 650nm.

Embodiment 2

[0028] A kind of AlGaInP semiconductor laser containing a highly selective etching barrier layer as described in Embodiment 1, the difference is that the second upper cladding layer 6 and the ohmic contact layer 7 form a ridge structure, and the second upper cladding layer 6 and the ohmic contact layer 7 form a ridge structure. The part of the layer 6 that does not cover the ohmic contact layer 7, the side surfaces of the second upper cladding layer 6 and the exposed corrosion barrier layer 5 are respectively coated with a dielectric film 8; above the ohmic contact layer 7, the coating contact is provided with a first The metal electrode layer 9 is provided with a second metal electrode layer 10 under the substrate 1; non-absorption windows 11 are provided at the front and rear end surfaces of the AlGaInP semiconductor laser.

Embodiment 3

[0030] A kind of AlGaInP semiconductor laser that contains highly selective etching barrier layer as described in embodiment 1, 2, its difference is that, described lower cladding layer, first upper cladding layer and second upper cladding layer are all with GaAs crystal lattice Matched Al 0.5 In 0.5 p.

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Abstract

The invention provides an AlGaInP semiconductor laser including a high-selective corrosion barrier layer. The AlGaInP semiconductor laser, from the bottom to the top, includes a substrate, a lower cladding, an active region, a first upper cladding, the corrosion barrier layer, a second upper cladding, and an ohmic contact layer. The A1GaInP semiconductor laser is characterized in that the corrosion barrier layer is a three-layer structure of (AlaGa1-a) 0.5In0.5P, GabIn1-bp, and (AlaGa1-a)0.5In0.5P from the bottom to the top, the thickness of each layer is in the range of 5-15nm, wherein a refers to 0.1-0.5, b refers to 0.5-0.7, the active region includes an (Al*Ga1-x)0.5In0.5P barrier layer, a GayIn1-yP quantum well, and an (Al*Ga1-x)0.5In0.5P barrier layer that are successively arranged from the bottom to the top, wherein x refers to 0.4-0.6, y refers to 0.4-0.6, and the values of b and y satisfy the condition of b>y. When the impurity induction quantum well mixing is carried out to form a non-absorption window, the corrosion barrier layer can reduce the mutual diffusion degree of Al and Ga atoms, so that the corrosion selectivity ratio of the corrosion barrier layer and the second upper cladding is improved. When a ridge-type waveguide structure is manufactured, the corrosion surface is flat, and the light output mode is stable.

Description

technical field [0001] The invention relates to an AlGaInP semiconductor laser containing a highly selective corrosion barrier layer, which belongs to the technical field of semiconductor lasers. Background technique [0002] AlGaInP visible light semiconductor lasers have the advantages of small size, long life, and high photoelectric conversion efficiency. They are gradually replacing traditional He-Ne gas lasers and ruby ​​solid-state lasers, and are widely used in optical disk reading and writing systems, barcode readers, and alignment markers. , medical care equipment and other fields. In addition, it is also a red light source for laser display devices such as laser TVs and portable projectors. These applications require the laser to maintain a stable optical mode and laser power output, and have high requirements on the life and reliability of the laser. [0003] The active region of the semiconductor laser is thin, and there is a difference in refractive index with...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343
CPCH01S5/34326H01S5/3438
Inventor 朱振张新徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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