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A preparation method of near-field holography-ion beam etching for variable-pitch gratings

A technology of variable-pitch grating and ion beam etching, which is applied in the direction of diffraction grating, optics, optical elements, etc., can solve the problems of single groove profile, difficulty in preparation, and poor repeatability of grating line density, so as to simplify the optical path of holographic production and improve Accuracy, the effect of reducing requirements

Active Publication Date: 2017-11-24
安徽中科光栅科技有限公司
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  • Application Information

AI Technical Summary

Problems solved by technology

The invention provides a near-field holographic preparation method of a variable-pitch grating to overcome the complexity of the optical path and poor repeatability of the grating line density in the preparation of the variable-pitch grating by the current holographic technology; it is difficult to prepare high-line-density variable-pitch gratings and groove shapes by the mechanical scribing method The outline is single; and the problem of poor resistance to radiation damage of the copied grating

Method used

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  • A preparation method of near-field holography-ion beam etching for variable-pitch gratings
  • A preparation method of near-field holography-ion beam etching for variable-pitch gratings
  • A preparation method of near-field holography-ion beam etching for variable-pitch gratings

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preparation example Construction

[0037] The present invention is a near-field holography-ion beam etching preparation method of a variable-pitch grating, the method comprising the following steps:

[0038] Step 1. According to the central period p of the variable-pitch grating to be fabricated 0 , determine the laser wavelength λ and incident angle i for near-field holographic exposure 0 , among the three satisfies:

[0039]

[0040] Using near-field holography can make variable-pitch grating period period and exposure laser wavelength λ and incident angle i 0 The following relationship should be satisfied:

[0041]

[0042] The purpose is that the incident laser light only has zero-order and negative-order diffraction after passing through the fused silica variable-pitch grating mask, and no other diffraction orders interfere with the generation of near-field holographic interference fringes;

[0043] Step 2, the design and manufacture of the fused silica variable pitch grating mask, the design meth...

Embodiment 1

[0057] Example 1: Central period p 0 A near-field holographic preparation method of a variable-pitch grating with a diameter of 416.6 nm (the central line density is 2400 lines / mm).

[0058] Step 1: A laser with a wavelength of 441.6nm is used as the exposure light source for near-field holography. Central period p 0 It is 416.6nm (the corresponding central line density is 2400 lines / mm). Calculate the incident angle i of near-field holographic exposure according to formula (1) 0 is 32°. According to the formula (2), the period variation range of the variable-pitch grating that can be reproduced is between 288nm-577nm. The period of the fused silica variable-pitch grating mask to be designed is between 333.2nm and 500nm.

[0059] Step 2: Design and fabrication of fused silica variable pitch grating mask

[0060] Design: range of groove profile (width ratio and groove depth) of a fused silica grating mask with a central period of 416.6nm;

[0061] Select the incident ang...

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Abstract

The invention discloses a near-field holographic-ion beam etching preparation method of a variable-spacing raster. A high-linear density variable-spacing raster is prepared by use of the near-field holographic-ion beam etching method. Compared with the common holographic-ion beam etching method, the holographic preparation light path of the variable-spacing raster can be simplified; requirements on stability of a holographic system is reduced; and precision of linear density repeatability is improved. Compared with the mechanical scratching method, a variable-spacing raster with high linear density and smooth rectangular groove-shaped profile can be easily produced. Compared with the normal nano-imprinting technology, by optimizing the near-field holographic-developing conditions, the duty cycle of the obtained photoresist raster mask in a certain range can be regulated. Thus, the preparation method is very important for preparation technology of the required variable-spacing raster in the field of laser plasma diagnosis, synchronous radiation and the like.

Description

technical field [0001] The invention belongs to the technical field of micro-nano processing of diffractive optical elements, and in particular relates to a near-field holography-ion beam etching preparation method of a variable pitch (variable line pitch) grating. Background technique [0002] Variable-pitch gratings are widely used in the fields of synchrotron radiation and plasma diagnosis because of their advantages of high resolution, aberration elimination, and simple scanning mechanism. [0003] At present, variable-pitch gratings are usually prepared by mechanical scribing and holographic-ion beam etching. The variable-pitch grating prepared by mechanical scribing method can flexibly control the linear density distribution. Mechanically ruled gratings usually have a triangular groove profile, which only has high diffraction efficiency near the blaze wavelength, and the diffraction efficiency of mechanically ruled variable-pitch gratings will be significantly reduced...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/18
CPCG02B5/1857G02B27/0012
Inventor 刘颖李媛芳刘正坤陈火耀邱克强徐向东洪义麟付绍军
Owner 安徽中科光栅科技有限公司
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