A kind of magnetic element, memory system and write operation method thereof

A magnetic element and magnetic technology, applied in the field of magnetic storage, can solve the problems of unsustainability, difficult expansion of MRAM memory, exponential increase in write current, etc., to achieve stable thermal stability, improve spin torque transfer efficiency, high speed and The effect of recording density

Active Publication Date: 2018-12-25
HUBEI ZHONGBU HUIYI DATA TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem in the prior art is that the write current required by traditional magnetic random access memory (MRAM) increases exponentially with the increase in recording density.
Therefore, MRAM memory based on traditional magnetic field switch technology has difficult to expand and unsustainable problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of magnetic element, memory system and write operation method thereof
  • A kind of magnetic element, memory system and write operation method thereof
  • A kind of magnetic element, memory system and write operation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048]In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0049] The invention utilizes the switching mechanism of the in-plane magnetization film of the magnetic spin valve under the spin torque transmission effect to realize the magnetic storage and recording of data. Design and fabrication methods of the magnetic element and a magnetic storage system such as Magnetic Random Access Memory ("MRAM") are also provided.

[0050] Embodiments of the present invention provide structures of magnetic elements with in-plane magnetization (layers), and the magnetization layers or local structures may still have partial perpendicular anisotropy. The perpendicular a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a magnetic element, a memory system and a writing operation method thereof; the magnetic element includes a magnetic pinned layer, a nonmagnetic isolation layer, a magnetic free layer and a cover layer; the nonmagnetic isolation layer is arranged between the magnetic pinned layer and the magnetic free layer Between; the cover layer connects the magnetic free layer with the external semiconductor transistor circuit. The magnetic free layer has demagnetization energy perpendicular to the film plane direction and anisotropy energy corresponding to perpendicular anisotropy. Its perpendicular anisotropy energy is lower than the demagnetization energy perpendicular to the film plane direction. When the write current passes through the magnetic element, the magnetic free layer can switch between parallel and antiparallel magnetic states in the plane direction through the spin torque transfer effect to achieve the purpose of magnetic storage.

Description

technical field [0001] The invention belongs to the technical field of magnetic storage, and more specifically relates to a magnetic element, a memory system and a writing operation method thereof. Background technique [0002] The initial elucidation of the spin torque transfer mechanism and subsequent in-depth physical property studies have laid the foundation for the development and potential commercial application of spin torque transfer and magnetic switch technology. One of the application directions is spin torque transfer magnetic random access memory (STT-MRAM). In terms of magnetic properties, the rotary torque transfer switch technology is revolutionary in replacing the concept and process of traditional magnetic random access memory (MRAM). At the same time, this technology solves the difficulty of expansion and unsustainability of MRAM memory based on traditional magnetic field switch technology. This characteristic of spin torque transfer magnetic random acce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08G11C11/16H01L43/00
CPCG11C11/161H10N50/01H10N50/10
Inventor 刁治涛李占杰罗逍
Owner HUBEI ZHONGBU HUIYI DATA TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap