GaN-based enhanced power electronic device and preparation method thereof

Abstract

The invention discloses a GaN-based enhanced power electronic device and a preparation method thereof. The GaN-based enhanced power electronic device comprises a substrate, a thin barrier Al (In, Ga)N / GaN heterostructure formed on the substrate, and a grid electrode, a source electrode and a drain electrode formed on the thin barrier Al (In, Ga)N / GaN heterostructure, wherein AlN passivation layers are formed in access areas between the grid electrode and the source electrode and between the grid electrode and the drain electrode. The AlN passivation layers with a polarization characteristic are utilized to restore two0-dimension electronic gas in channels of the thin barrier Al (In, Ga)N / GaN heterostructure under the AlN passivation layers, so that the conducting resistance of the device is lowered, and high-voltage current collapse of the device is inhibited. According to the invention, the controllability and the consistency of a threshold voltage of the GaN-based enhanced device are improved, the technology repeatability of the GaN-based enhanced device is eliminated, the yield rate of the GaN-based enhanced electronic device is improved, and the industrialization process of the GaN-based enhanced device is promoted.

Description

technical field [0001] The invention relates to the technical field of GaN-based power electronics and microwave power amplifier applications, in particular to a GaN-based enhanced power electronic device and a preparation method thereof. Background technique [0002] High-efficiency power electronic devices (also known as power switching devices) have great application value in the fields of smart grid, industrial control, new energy power generation, electric vehicles, and consumer electronics. More than 70% of the world's power electronic systems are powered by power semiconductor devices. Management system to control and manage. The performance of traditional Si power electronic devices is close to the physical limit of Si semiconductor materials. New wide-bandgap semiconductor devices represented by SiC and GaN are expected to become A strong contender for the next generation of high-efficiency power electronics. [0003] The enhanced type is a key requirement for the...

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Problems solved by technology

[0005] On the other hand, due to the existence of surface states, GaN-based power electronic devices have severe current collapse when operating at high voltage, which directly leads to an increase in the dynamic on-resistance and power consumption of the device.

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