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An up-conversion light-emitting structure capable of increasing luminous intensity and its preparation method

A technology of luminous structure and luminous intensity, applied in luminescent materials, chemical instruments and methods, photovoltaic power generation, etc., can solve problems such as KLaF films that have not been seen, achieve regulation and enhancement, solve low luminous intensity, and strong practicability. Effect

Inactive Publication Date: 2017-05-10
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

QUR 4 (262 cm -1 ) than NaYF 4 ( 360 cm -1 ) lower phonon energy, so its thin film should have excellent up-conversion performance, but KLaF has not yet been seen 4 Report on the Development of Thin Film Upconversion Luminescent Properties

Method used

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  • An up-conversion light-emitting structure capable of increasing luminous intensity and its preparation method
  • An up-conversion light-emitting structure capable of increasing luminous intensity and its preparation method
  • An up-conversion light-emitting structure capable of increasing luminous intensity and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 1 Light emitting structure of Ag thin film / lanthanum potassium fluoride thin film without ZnO dielectric layer

[0029] (1) Weigh 50 mg of polymethyl methacrylate (PMMA) powder and place it in a stirring bottle, then add 4 mL of chloroform solvent, stir for 30 minutes, then add 30-50 mg of aluminum-doped KLaF 4 : Yb 3+ / Er 3+ powder, continue stirring for 24 h to obtain a transparent colloidal solution;

[0030] (2) Clean the common glass substrate and dry it;

[0031] (3) Deposit a metal Ag film on the glass substrate by vacuum evaporation method, with a thickness of about 10-20 nm;

[0032] (4) The colloidal solution obtained in step (1) was spin-coated on the Ag film, and the spin-coating conditions were: forward rotation speed 650 rpm, time 12 s; back rotation speed 2000 rpm, time 30 s;

[0033] (5) After the film is dry, repeat the step (4) to obtain an up-conversion light-emitting layer with a thickness of 50-100 nm.

Embodiment 2

[0034] Example 2 Light emitting structure of Ag thin film / lanthanum potassium fluoride thin film containing ZnO dielectric layer

[0035] (1) Weigh 50 mg of polymethyl methacrylate (PMMA) powder and place it in a stirring bottle, then add 4 mL of chloroform solvent, stir for 30 minutes, then add 30-50 mg of aluminum-doped KLaF 4 : Yb 3+ / Er 3+ powder, continue stirring for 24 h to obtain a transparent colloidal solution;

[0036] (2) Clean the common glass substrate and dry it;

[0037] (3) Deposit a metal Ag film on the glass substrate by vacuum evaporation method, with a thickness of about 10-20 nm;

[0038] (4) Deposit zinc oxide on the metal Ag film by radio frequency magnetron sputtering. The sputtering process conditions are: use zinc oxide ceramic target, and the background vacuum is less than 6×10 -4 Pa, target base distance of 75 mm, Ar gas flow rate of 60 sccm, sputtering pressure of 0.5 Pa, sputtering power of 100 W, the obtained zinc oxide film thickness is 5-2...

Embodiment 3

[0042] Example 3 Light emitting structure of Au thin film / lanthanum potassium fluoride thin film without ZnO dielectric layer

[0043](1) Weigh 50 mg of polymethyl methacrylate (PMMA) powder and place it in a stirring bottle, then add 4 mL of chloroform solvent, stir for 30 minutes, then add 30-50 mg of aluminum-doped KLaF 4 : Yb 3+ / Er 3+ powder, continue stirring for 24 h to obtain a transparent colloidal solution;

[0044] (2) Clean the common glass substrate and dry it;

[0045] (3) Deposit a metal Au film on the glass substrate by vacuum evaporation method, with a thickness of about 10-20 nm;

[0046] (4) Spin-coat the colloidal solution obtained in step (1) on the Au film, the spin-coating conditions are: forward rotation speed 650 rpm, time 12 s; back rotation speed 2000 rpm, time 30 s;

[0047] (5) After the film is dry, repeat the step (4) to obtain an up-conversion light-emitting layer with a thickness of 50-100 nm.

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Abstract

The invention discloses an up-conversion luminescent structure capable of raising luminescence intensity and a preparation method, wherein the structure comprises a substrate, a metal film layer, a dielectric layer and an up-conversion luminescent layer; the method comprises the steps of depositing Ag or Au on a piece of glass or silicon substrate by vacuum evaporation or direct current sputtering to form the metal film layer; then sputtering a layer of zinc oxide film by radio frequency magnetron sputtering; and finally spin coating a layer of fluorination lanthanum potassium doped with rare earth ion. According to the invention, the fluorination lanthanum potassium doped with rare earth ion is taken as the up-conversion luminescent material to enhance the luminescence intensity of the upper transition luminescent structure; and the thickness of the dielectric layer zinc oxide film is controlled to regulate and control the luminescence intensity of the up-conversion luminescent structure, therefore up-conversion luminescence intensity is enhanced. The up-conversion luminescent structure can be applied in biomedical science, luminescent devices and solar energy cell fields; the preparation technology is simple; the operation is easy and the application prospect is wide.

Description

technical field [0001] The invention belongs to the technical field of up-conversion luminescent materials, and in particular relates to an up-conversion luminescent structure capable of improving luminous intensity and a preparation method thereof. Background technique [0002] Up-conversion fluorides have broad application prospects in biomedicine, light-emitting devices, solid-state lasers, solar cells and other fields, and have become one of the current research hotspots. Currently, NaYF doped with rare earth ions 4 It is considered to be one of the most promising luminescent materials. The fluorides currently reported in the literature include rare earth doped NaYF 4 、LiYF 4 and other luminescent films. QUR 4 (262 cm -1 ) than NaYF 4 ( 360 cm -1 ) lower phonon energy, so its thin film should have excellent up-conversion performance, but KLaF has not yet been seen 4 Report on the development of thin film up-conversion luminescent properties. [0003] In recent ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/055H01L33/50H01L33/48H01L33/00C09K11/85
CPCY02E10/52
Inventor 周海芳王谢春程树英郑巧赖云锋孙建斌
Owner FUZHOU UNIV
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