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Light-emitting diode with high expanding effect

A light-emitting diode and effect technology, which is applied in the direction of light source, point light source, lighting device, etc., can solve the problem of increasing the light-blocking area of ​​the electrode, and achieve the effect of increasing the external quantum effect

Inactive Publication Date: 2016-01-06
XIAMEN CHANGELIGHT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the use of P-type extended electrodes significantly increases the light-blocking area of ​​the electrode; increasing the doping concentration of N-type will increase the effect of N-type current expansion to the limit, and will encounter bottlenecks when applied to large-area chips.

Method used

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  • Light-emitting diode with high expanding effect

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Embodiment Construction

[0028] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0029] Such as figure 1 As shown, the present invention provides a light-emitting diode with high spreading effect, including a substrate, on which an epitaxial layer of a light-emitting diode chip is arranged, and a second An alternating multilayer film structure, a second alternate multilayer film structure is provided on the other two sides of the epitaxial layer of the light emitting diode chip.

[0030] Preferably, the first alternating multilayer film structure is Si 3 N 4 and Ni-Fe alloy multilayer alternate structure, the second alternate mul...

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Abstract

The invention discloses a light-emitting diode (LED) with a high expanding effect. The LED comprises a substrate on which an LED chip epitaxial layer is arranged. The two side surfaces of the LED chip epitaxial layer are provided with first alternate multilayer film structures. The other two side surfaces of the LED chip epitaxial layer are provided with second alternate multilayer film structures. The N-type and P-type current expanding effects of the LED are effectively enhanced. The electrode light-shielding area is not increased. The N-type current expanding effect of a large-size chip is enhanced.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, and in particular provides a light-emitting diode with high spreading effect. Background technique [0002] In recent years, light-emitting diodes have developed rapidly, which is closely related to the development of semiconductor optoelectronic technology and new lighting source technology. With the continuous expansion of LED application fields, people have put forward higher and higher requirements for the performance of LED chips. Therefore, it is necessary to continuously improve the external quantum efficiency of LEDs. [0003] Enhancing the current spreading effect of light-emitting diodes is an important way to improve the external quantum efficiency of LEDs. Currently commonly used methods are: P-type by using P-type extended electrodes, N-type by increasing the doping concentration of N-type and so on. However, the use of P-type extended electrodes significantly increa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/44F21Y101/02
CPCH01L33/14H01L33/44
Inventor 林志伟陈凯轩张永卓祥景姜伟方天足陈亮
Owner XIAMEN CHANGELIGHT CO LTD
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