FinFET manufacturing method
A manufacturing method and fin technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems affecting the threshold voltage and sub-threshold characteristics of the device, and achieve the purpose of suppressing the diffusion of impurities, optimizing the process, and improving the device. performance effect
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[0020] In view of the above problems, the present invention provides a FinFET manufacturing method, which enables PTSL to be effectively distributed in the region where the punch-through current occurs without introducing impurity distribution into the channel. Specifically, the method includes:
[0021] a. providing a substrate 100, and forming fins 200 on the substrate;
[0022] b. forming isolation layers 300 on the substrates on both sides of the fin 200;
[0023] c. forming a punch-through barrier layer 310 and a diffusion barrier layer 320 in the fins on both sides of the upper half of the isolation layer 300;
[0024] d. Forming source and drain regions at both ends of the fin, forming a gate structure in the middle of the fin, and filling an interlayer dielectric layer 500 above the isolation layer 300 . Wherein, the penetration barrier layer 310 and the diffusion barrier layer 320 are formed by lateral scattering of impurity particles from the isolation layer 300 in...
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