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Preparation method of N-doped SiC nanoneedle flexible field emission cathode material

A field emission cathode and nanoneedle technology, which is applied in the preparation of SiC flexible field emission cathode materials and the preparation field of N-doped SiC nanoneedle flexible field emission cathode materials, can solve the problem that no atomic-doped SiC nanostructure flexible cathode materials are disclosed. preparation and other issues to achieve the effect of stabilizing the electron emission characteristics

Active Publication Date: 2015-12-30
NINGBO UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

However, the cathode material prepared in this patent is SiC nanowires with catalyst particles at the end, and the preparation of atom-doped SiC nanostructure flexible cathode materials is not disclosed.

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  • Preparation method of N-doped SiC nanoneedle flexible field emission cathode material
  • Preparation method of N-doped SiC nanoneedle flexible field emission cathode material
  • Preparation method of N-doped SiC nanoneedle flexible field emission cathode material

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Embodiment 1

[0034] The initial raw material is polysilazane, in N 2 Under the protection of the atmosphere, heat preservation at 260°C for 30 minutes for thermal crosslinking and curing. Put the solidified SiCN solid into a nylon resin ball mill tank, and ball mill it into powder. Weigh 300 mg of polysilazane powder and place it at the bottom of the graphite crucible container. Cut carbon fiber cloth 5×5cm (length×width), and spray a layer of 10nm thick Au film on its surface as a catalyst. Arrange the Au-sprayed carbon fiber on the top of the graphite crucible container, and place it in an atmosphere sintering furnace heated by graphite resistance. The atmosphere furnace is first evacuated to 10 -4 Pa, refill N 2 :Ar=5:95 mixed gas (purity is 99.99%), until the pressure is one atmosphere (~0.11Mpa), and then the pressure is constant. Then heat up rapidly from room temperature to 1750°C at a rate of 30°C / min for pyrolysis, then cool down to 1100°C at a rate of 16°C / min, and finally c...

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Abstract

The invention relates to a preparation method of an N-doped SiC nanoneedle flexible field emission cathode material, and belongs to the technical field of material preparation. The preparation method comprises the following steps: preprocessing an organic precursor; forming a catalyst on a flexible substrate; placing the organic precursor and the flexible substrate in an atmosphere sintering furnace, heating to a temperature of 1700 DEG C to 1800 DEG C for thermal decomposition, then cooling to reduce the temperature to 1000 DEG C to 1200 DEG C, and finally reducing the temperature to a room temperature along with a furnace so as to obtain the N-doped SiC nanoneedle flexible field emission cathode material. According to the invention, preparation of the N-doped SiC nanoneedle flexible field emission cathode material is realized, the prepared N-doped SiC nanoneedle flexible field emission cathode material has a quite low unlatching electric field at different temperatures, and at the same time, the electron emission characteristic is also stable at a high temperature.

Description

technical field [0001] The invention relates to a preparation method of a SiC flexible field emission cathode material, in particular to a preparation method of an N-doped SiC nano-needle flexible field emission cathode material, which belongs to the technical field of material preparation. Background technique [0002] With the development of flexible wearable and portable functional electronic devices, it is required that the components that construct their working devices not only have good flexibility, but also provide sufficient superior working performance and stability. Therefore, using low-dimensional nano-semiconductor components to construct functionally flexible systems with both mechanical flexibility and superior performance is one of the active research hotspots at home and abroad. Field emission is one of the intrinsic properties of low-dimensional nanomaterials. Studies have shown that nanostructures have excellent field emission properties that traditional ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J9/02B82Y30/00
Inventor 陈善亮高凤梅王霖郑金桔杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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