Silicon-based pressure sensor and manufacturing method thereof

Abstract

A silicon-based pressure sensor and its manufacturing method. The sensor is composed of a differential pressure sensitive device, a static pressure compensation unit, and a packaging structure. The differential pressure sensitive device adopts a differential capacitance structure, and is characterized in that the upper glass fixed plate, Silicon sensitive chip movable pole plate, lower glass fixed pole plate, glass bottom plate, and pressure guiding tube are packaged; the static pressure compensation unit adopts silicon piezoresistive chip packaged in absolute pressure to measure the static pressure value, and its characteristic is that it adopts point type The suspension method is fixed above the differential pressure sensitive device, the signal drift is small, and the space is saved. It forms a composite laminated structure with the differential pressure sensitive device and is suspended and welded in the packaging structure. The packaging structure includes the sensor base, the pressure guiding conduit, the lead base, etc. It is characterized in that it adopts a suspension structure design, and the composite structure of differential pressure and static pressure is suspended in the sensor base. The lead base is located at one end of the base, and the pressure induction The conduit is located at the other end of the base, and each component is welded on the sensor base as a whole through an improved welding process.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a silicon-based pressure sensor manufactured by adopting the fusion technology of microelectronics and micromachining and a manufacturing method thereof. Background technique [0002] With the rapid development of sensor technology, the application of silicon-based pressure sensors is becoming more and more extensive, and gradually develops in the direction of high precision, high stability, high reliability, networking, intelligence, and integration; among them, capacitive silicon-based pressure sensors The sensor is recognized as a new generation of silicon-based pressure sensor with broad development prospects for its outstanding technical advantages such as high precision, high stability, and high reliability, and is an indispensable key component in the field of automation control. The capacitive silicon-based pressure sensor uses the principle of capacitance to ...

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Problems solved by technology

However, due to the limitation and influence of factors such as the state of raw materials, process equipment conditions, and the perfection of processing technology, the main problems existing in the manufacturing process of existing silicon-based pressure sensors are low production yield and certain dispersion of static pressure errors. , Oil leakage from the welding joint of the packaging structure, these problems directly affect the performance, reliability and yield of the sensor, and play a restrictive role in the promotion and application of this silicon-based pressure sensor

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