Ultraviolet temperature measuring method and device for measuring surface temperature of mocvd epitaxial wafer

Abstract

The invention discloses an ultraviolet temperature measurement method applied to the surface temperature measurement of MOCVD epitaxial wafers, belonging to the technical field of non-contact ultraviolet temperature measurement. First, measure the thermal radiation signal intensity of the object under test at the selected wavelength, and adjust the sub-range according to the output response of the photodetector; secondly, select the one that matches the gain gear of the photodetector according to the current sub-range in the previous step. The intensity of the light source is measured by reflectance, and then the emissivity is obtained; according to the emissivity obtained in the previous step, the emissivity correction is performed on the measured thermal radiation signal intensity, and the accurate temperature of the surface of the measured object is obtained. The invention measures the surface temperature of the object by measuring the thermal radiation in the ultraviolet band and correcting the emissivity, and the obtained temperature is accurate; by adopting the single-wavelength temperature measurement technology, it can automatically adjust the photoelectric response gain and the intensity of the light source to achieve a large range and high precision temperature Measurement.

Description

technical field [0001] The invention belongs to the technical field of non-contact ultraviolet temperature measurement, and in particular relates to a method and a device for measuring the real temperature on the surface of an epitaxial wafer used in the process growth of a metal organic chemical vapor deposition system (MOCVD). Background technique [0002] In the growth process of semiconductor thin film, the surface temperature is an important parameter to determine the quality of the thin film. It affects the thickness and warpage of the thin film surface and the growth of surface quantum wells. At present, MOCVD (metal-organic vapor deposition) is mostly used in the mass production of semiconductor thin films in industry. Therefore, it is of great significance to accurately detect and control the surface temperature of thin films in MOCVD. [0003] At present, infrared thermometers are mostly used to measure the surface temperature of thin films in MOCVD, but with the d...

AI Technical Summary

Problems solved by technology

The first method to achieve a large range is simple, but when it is applied to ultraviolet temperature measurement, a single magnification cannot meet the temperature measurement of a large range because the intensity of ultraviolet heat radiation changes too much with temperature; the second method to achieve a large range can increase Large measurement range, but when applied to ultraviolet temperature measurement, more modules are required for ultraviolet temperature measurement in the same temperature range, the structure is complex, and the cost is high

Images