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ZnSnN2 pn junction and preparation method thereof

A zinc tin nitride, pn junction technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., to achieve the effect of improving accuracy, reducing edge discharge effect, and simplifying the preparation process

Active Publication Date: 2015-12-02
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently, there is no information about ZnSnN 2 The pn junction is reported, and the pn junction is capable of incorporating ZnSnN 2 Applied to the basis of solar cells, so the preparation of ZnSnN 2 pn junction is imperative

Method used

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  • ZnSnN2 pn junction and preparation method thereof
  • ZnSnN2 pn junction and preparation method thereof

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preparation example Construction

[0054] In the preparation process of the pn junction of the present invention, the n-type ZnSnN 2 If the deposition thickness of the semiconductor layer 120 is too small, the formed pn junction has poor performance and cannot meet practical applications; if the deposition thickness is too large, it not only increases the cost, but also is not conducive to the development trend of device miniaturization. Therefore, n-type ZnSnN 2 The thickness of the semiconductor layer 120 is preferably 60nm-300nm, within this thickness range, the obtained pn junction has obvious rectifying effect.

[0055] In the pn junction of the present invention, if the cross-sectional area of ​​the electrode is too small, large resistance will be generated, and the preparation is difficult; if the cross-sectional area of ​​the electrode is too large, electric leakage will easily occur and the safety performance of the device will be reduced. Preferably, as an implementation mode, n-type ZnSnN 2 The dia...

Embodiment 1

[0101] (1) Cut the p-type single-polished silicon wafer with ρ2 Sample silicon wafers, washed and dried;

[0102] (2) Deposit ZnSnN on p-type Si 2 . Sputtering at room temperature, set the background vacuum to 6×10 -4 Pa. The magnetron sputtering method is adopted under vacuum conditions, the sputtering power is 120W, and the working pressure is 2.0Pa. The cathode zinc-tin alloy target is bombarded with N ions, so that the target atoms are sputtered and react with N ions to form ZnSnN 2 , ZnSnN 2 The thickness is 120nm.

[0103] (3) In the sample ZnSnN 2 A layer of photoresist is spin-coated on the surface to form the first mask;

[0104] (4) Utilize the first mask of ultraviolet lithography;

[0105] (5) Corrosion of ZnSnN not protected by photoresist with etching solution 2 , to get the ZnSnN 2 The diameter of the cross-sectional circle is 100 μm.

[0106] (6) Utilize acetone and deionized water to clean the remaining photoresist in step (5);

[0107] (7) In Si-Zn...

Embodiment 2

[0112] (1) Cut the p-type single-polished silicon wafer with ρ2 Sample silicon wafers, washed and dried;

[0113] (2) Deposit ZnSnN on p-type Si 2 . Sputtering at room temperature, set the background vacuum to 6×10 -4 Pa. The magnetron sputtering method is adopted under vacuum conditions, the sputtering power is 120W, and the working pressure is 2.0Pa. The cathode zinc-tin alloy target is bombarded with N ions, so that the target atoms are sputtered and react with N ions to form ZnSnN 2 , ZnSnN 2 The thickness is 120nm.

[0114] (3) In the sample ZnSnN 2 A layer of photoresist is spin-coated on the surface to form the first mask;

[0115] (4) Utilize the first mask of ultraviolet lithography;

[0116] (5) Corrosion of ZnSnN not protected by photoresist with etching solution 2 , to get the ZnSnN 2 The diameter of the cross-sectional circle is 100 μm.

[0117] (6) Utilize acetone and deionized water to clean the remaining photoresist in step (5);

[0118] (7) In Si-Zn...

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Abstract

The invention discloses a ZnSnN2 pn junction and a preparation method thereof. The pn junction comprises a p-type semiconductor, an n-type semiconductor, a first electrode and a second electrode, wherein the p-type semiconductor and the n-type semiconductor are closely contacted, and the first electrode and the second electrode are arranged on the p-type semiconductor and the n-type semiconductor respectively. The pn junction is characterized in that a material of the p-type semiconductor is Si, and a material of the n-type semiconductor is ZnSnN2. The pn junction disclosed by the invention has an obvious rectification effect, and has potential application values in the field of solar cells.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a zinc-tin nitride pn junction and a preparation method thereof. Background technique [0002] With the increasing shortage of energy in the world, the excessive use of fossil energy and the resulting environmental pollution and greenhouse gas problems, the effective use of renewable energy, especially solar energy, has always been a hot topic, and solar cells can directly convert solar energy converted into electricity. However, the absorbing layer materials of thin-film solar cells at this stage have technically insurmountable problems, such as light-induced attenuation, high price, toxicity of materials and scarcity of raw materials. Therefore, the core issue of solar cells is still the basic materials, and it is particularly important to develop new, cheap and stable photovoltaic thin film materials. [0003] ZnSnN 2 As an emerging intrinsic n-type nitride semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/074H01L31/18H01L31/0224
CPCH01L31/022416H01L31/022425H01L31/074H01L31/18Y02E10/50Y02P70/50
Inventor 梁凌燕秦瑞锋曹鸿涛张胜男李秀霞罗浩
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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