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Bidirectional photothyristor chip and solid state relay

A technology of thyristor and bidirectional light, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of efficiency performance/cost degradation, etc., achieve the effect of minimizing inventory, avoiding multi-variety and small-scale production, and improving productivity

Active Publication Date: 2017-11-21
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, application to SSRs with a current capacity larger than 1A has a problem of finding that efficiency (=performance / cost) deteriorates

Method used

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  • Bidirectional photothyristor chip and solid state relay
  • Bidirectional photothyristor chip and solid state relay
  • Bidirectional photothyristor chip and solid state relay

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0099] figure 1A schematic pattern layout in the bidirectional photothyristor chip of this embodiment is shown. The bidirectional photothyristor chip 40, such as Figure 15 In the bidirectional photothyristor chip disclosed in the above-mentioned Patent Document 1, the photothyristor chip including CH1 and the photothyristor CH2 will have a point-symmetrical pattern with respect to the center line and the intersection point of a line perpendicular to the center line. When the bidirectional photothyristor is defined as the cell 42 which is the minimum unit, an arbitrary number of cells 42 are mounted on one semiconductor chip. Here, the first photothyristor 42 a of CH1 and the second photothyristor 42 b of CH2 have an anode diffusion region 43 , a gate diffusion region 44 and a cathode diffusion region 45 . In addition, arrows indicate the flow direction of electric current.

[0100] In this bidirectional photothyristor chip 40 , a plurality of units 42 composed of the abov...

no. 2 approach

[0138] Figure 9 The wiring structure of the above-mentioned cells in the bidirectional photothyristor chip of this embodiment is shown. This bidirectional photothyristor chip 40 is the same as the case of the above-mentioned first embodiment, and is equipped with any number of CH1 including CH1 having a pattern point-symmetrical with respect to the intersection point of the center line and a line perpendicular to the center line. A photothyristor 42a of CH2 and a second photothyristor 42b of CH2 form the unit 42 of the bidirectional photothyristor.

[0139] In the above-mentioned first embodiment, among the bidirectional photothyristors constituting the unit 42, the first photothyristor 42a of CH1 and the second photothyristor 42b of CH2 are wired in antiparallel through the lead frame T1 and the lead frame T2. Therefore, the first photothyristor 42a of CH1 and the second photothyristor 42b of CH2 are triggered alternately, and are used for bidirectional AC operation from le...

no. 3 approach

[0145] Figure 10 The wiring structure between the said cells in the bidirectional photothyristor chip of this embodiment is shown. The bidirectional photothyristor chip 40 of the present embodiment is composed of two cells (bidirectional photothyristors) 42 . In each cell 42, the anode diffusion region 43 of the first photothyristor 42a of CH1 and the cathode diffusion region 45 of the second photothyristor 42b of CH2 are connected to each other by the internal wiring 53, as in the first embodiment described above. In addition, the cathode diffusion region 45 of the first photothyristor 42 a of CH1 and the anode diffusion region 43 of the second photothyristor 42 b of CH2 are connected to each other by an internal wiring 54 .

[0146] In addition, among the two cells (bidirectional photothyristors) 42, the Al electrode 43a on the anode diffusion region 43 of the first photothyristor 42a of CH1 is connected to the lead frame T2 via Au wires 55a and 55b. In addition, the Al e...

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Abstract

The invention provides a two-way photosensitive thyristor chip which can be applied to an SSR with high current capacity. The two-way photosensitive thyristor chip (40) is carried with a plurality of units (42) on a surface of a semiconductor chip. Each unit (42) includes a first photosensitive thyristor portion (42a) and a second photosensitive thyristor portion (42b) which are separately formed. Each photosensitive thyristor portion (42a, 42b) has a PNPN portion which includes: an anode diffusion area (43), a substrate (41), a control electrode diffusion area (44), and a cathode diffusion area (45). The anode diffusion area (43) extends in one direction and has one conductive type of either an N type or a P type. The substrate (41) has the other conductive type of the N type or the P type. The control electrode diffusion area (44) has a conductive type corresponding to the anode diffusion area (43). The cathode diffusion area (45) is formed within the control electrode diffusion area (44) with respect to the anode diffusion area (43) and has the other conductive type of the N type or the P type.

Description

technical field [0001] The present invention relates to a bidirectional photosensitive thyristor chip and a solid-state relay (hereinafter referred to as SSR) using the bidirectional photosensitive thyristor chip. Background technique [0002] Conventionally, as an SSR used in communication, it has Figure 13 The circuit configuration shown. The SSR8 includes: a light-triggering coupler 3 formed by a light-emitting element 1 such as an LED (light-emitting diode) and a triggering bidirectional photosensitive thyristor 2; a bidirectional thyristor (hereinafter sometimes referred to as a main thyristor) 4 for actually controlling a load; And a snubber circuit 7 formed by a resistor 5, a capacitor 6, and the like. [0003] In addition, the equivalent circuit diagram of the optical trigger coupler 3 constituting the above-mentioned SSR8 is as follows: Figure 14 shown. The bidirectional photothyristor 2 includes a photothyristor 9 of CH (channel) 1 and a photothyristor 10 of C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/747
Inventor 鞠山满松本浩司泽井敬一铃木成次一条尚生
Owner SHARP KK
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