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A method of manufacturing a semiconductor device

A manufacturing method, a semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of the decline in the yield of semiconductor devices, affecting the removal of contact holes for dummy gates, affecting the gap filling ability of interlayer dielectric layers, etc. problem, to achieve the effect of improving yield rate, improving gap filling ability, and ensuring normal deposition

Active Publication Date: 2018-06-08
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

These voids will affect subsequent processes such as interlayer dielectric layer CMP, dummy gate removal, and contact hole formation, which will eventually lead to a decline in the yield of semiconductor devices.
[0004] It can be seen that, in the existing manufacturing method of semiconductor devices, after wet stress proximity technology (SPT) treatment, overhangs (overhang) are easily formed on the top outside of the sidewall of the shielding layer, and this will affect the interlayer dielectric. The gap filling ability of the electrical layer will eventually lead to a decrease in the yield of semiconductor devices

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  • A method of manufacturing a semiconductor device
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Embodiment Construction

[0027] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0028] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0029] It will be understood that when an element or layer is referred t...

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Abstract

The invention provides a method for manufacturing a semiconductor device and relates to the technical field of semiconductors. In the manufacturing method of the semiconductor device of the present invention, by adding the step of removing the protrusion formed on the outer side of the top of the first side wall after the step of stress proximity technology processing, the gap filling ability can be improved, and the normality of the interlayer dielectric layer can be ensured. deposition, thereby improving the yield of the entire semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] In the field of semiconductor technology, for advanced technology, due to the small space between adjacent gates, it becomes very difficult to fill the gap when forming an interlayer dielectric layer (ILD), so stress proximity technology is often required (SPT) processing to improve gap fill process margin. In addition, stress proximity technology also plays an important role in improving channel stress and enhancing carrier mobility. [0003] Both wet etching and dry etching can be used for stress proximity technology (SPT) processing, wherein wet SPT is widely used due to its small loss to metal silicide (NiSi). During the wet SPT process, the sidewall silicon nitride (SiN) can be completely or partially removed based on different requirements for the sidewall film. Generally, sidewalls a...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L21/336
Inventor 于书坤韦庆松
Owner SEMICON MFG INT (SHANGHAI) CORP
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