Write circuit and memory

Abstract

The embodiment of the invention discloses a write circuit and a memory. The write circuit of the embodiment comprises a control circuit, a write current generation module, a column gating circuit and a voltage detection module; the control circuit and a memory controller are connected with the write current generation module; the write current generation module is connected with the voltage detection module, the column gating circuit and a memory array respectively; the voltage detection module is also connected with the column gating circuit and the memory array respectively; and the column gating circuit is also connected with the memory array and the control circuit. The write circuit and the memory provided by the embodiment of the invention improve the write reliability and write speed of the memory and avoid the waste of write functions.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a writing circuit and a memory. Background technique [0002] In recent years, with the continuous development of the second-generation spin transfer torque magnetic memory (English full name: SpinTransferTorqueMagneticRandomAccessMemory, English abbreviation: STT-MRAM) technology, it has become more and more mature, and gradually began to be used in actual industrial production . [0003] The basic storage unit of STT-MRAM is mainly composed of a magnetic tunnel junction (English full name: Magnetic TunnelJunction, English abbreviation: MTJ) and an N-type metal oxide semiconductor transistor (English full name: N-Type-Metal-Oxide-Semiconductor-Transistor, English Abbreviated as NMOS) in series. The MTJ is mainly composed of three layers of thin films, that is, the upper and lower layers are ferromagnetic layers, and the middle is a tunneling layer. The magnetization direct...

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Problems solved by technology

[0008] Although the use of a fixed long write current pulse can increase the probability of MTJ free layer magnetization direction reversal, due to the randomness of STT reversal, MTJ may undergo state reversal at any time within the write current pulse, that is, most MTJs will be in the write current state. The state reversal occurs within the pulse, which inevitably increases the write delay, which in turn causes waste of write power consumption

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