Multi-channel flash memory chip array structure and write-in and read-out methods thereof

Abstract

The invention relates to a multi-channel flash memory chip array structure and write-in and read-out methods thereof, which overcome the defect of a slow read-write speed of flash memory data in the prior art. The multi-channel flash memory chip array structure comprises a plurality of channels consisting of flash memory chips, data buses, control buses, and chip selection signal wires, wherein each flash memory chip corresponds to one chip selection signal wire; the chip selection signal wire of each chip is independent; and all the flash memory chips in each channel share one data bus and one control bus which are independent of the other channels. The write-in method comprises the following steps of: transmitting a command and an address message to a command resolving unit through a command interface; starting a data interface management unit and a channel arbitration unit; pre-distributing the channels according to the address message by the channel arbitration unit, and transmitting the data to the channel arbitration unit and a data distribution unit; writing the data in a cache of a corresponding channel, and then starting a corresponding flash memory sequence generation module by the channel arbitration unit; and finally, writing the data into the flash memory chip. The flash memory has a fast write-read speed and high data write-in reliability.

Description

Technical field [0001] The invention relates to a storage device and a writing and reading method thereof, in particular to a multi-channel flash memory array structure and a writing and reading method thereof. Background technique [0002] As a new non-volatile storage medium, flash memory has become very popular in the field of consumer electronics due to its many advantages such as high storage density, easy portability, low power consumption, long data retention time after power failure, and good shock resistance. In the field of industry and military industry, more and more attention and welcome. In some large-capacity data storage applications, multiple flash memories are often cascaded or used as a whole column to expand storage space and improve data throughput. However, the flash memory needs to wait a long time after writing data to ensure that the data is written correctly. Typically, a write needs to wait 200us, and the maximum wait time is 700us. If you follow the...

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Problems solved by technology

[0004] The object of the present invention is to solve the defect of slow reading and writing speed of flash memory data in the prior art, and provide a multi-channel flash memory array structure capable of fast reading and writing flash memory and its writing and reading method

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