System level optimization method for power supply voltage of SOI process

Abstract

The invention provides a system level optimization method for a power supply voltage of an SOI process, which is used for optimizing the power supply voltage of a circuit chip based on the SOI process at the early design stage with a heat effect considered. The main steps comprise: establishing a thermal model of the chip; establishing a total power consumption model of the chip; establishing a function expression with the power consumption and a temperature as independent variables; establishing an autocorrelation equation based on the thermal model; establishing a time delay model of temperature consciousness; defining an optimization function of time delay and power consumption; and calculating a minimum value of FOM to figure out an optimal value. The system level optimization method provided by the invention has the beneficial effects that, the influence of temperature on the power consumption of the chip and the circuit performance in the SOI process is considered, and on this basis, the power supply voltage is optimized in a system level to maximize the circuit performance and minimize the circuit power consumption. The value of the optimization method is to quantitatively see the optimization result as soon as possible to help the early architecture of a designer.

Description

Technical field [0001] The invention relates to the technical field of integrated circuit computer-aided design, in particular to a system-level optimization method of power supply voltage under SOI technology. Background technique [0002] With the gradual shrinking of the feature size of VLSI to advanced nanotechnology nodes, a series of new problems have emerged in bulk silicon technology in terms of materials, device structures, and manufacturing processes. In order to overcome the shortcomings of bulk silicon CMOS technology, SOI technology has been proposed and has gradually become the mainstream technology for manufacturing high-speed, low-power, and highly integrated VLSI. [0003] Although SOI technology has many incomparable advantages over bulk silicon technology, the main feature of SOI technology comes from full dielectric isolation (SOICMOS devices also contain a layer of SiO 2 It is the insulating oxide buried layer of the material), and the thermal conductivity of t...

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Problems solved by technology

[0005] However, The reduction will directly lead to the weakening of the circuit performance

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