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Method and device for growth of mercurous iodide single crystal

A technology of mercurous iodide and mercurous iodide is applied in the field of material engineering, and can solve the problems that it is difficult to obtain a single crystal with practical value and the like

Inactive Publication Date: 2015-11-18
XIHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main method of growing mercurous iodide single crystal is the physical vapor phase transport method (PVT method). The gas-phase grown mercurous iodide single crystal often contains defects such as growth stripes, and it is difficult to obtain a single crystal with practical value.
N.B.Singh et al. once melted mercurous iodide in a quartz tube, tried to grow a mercurous iodide single crystal by the melt method, but failed, and only observed the delamination phenomenon of the mercurous iodide melt

Method used

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  • Method and device for growth of mercurous iodide single crystal
  • Method and device for growth of mercurous iodide single crystal
  • Method and device for growth of mercurous iodide single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] In this example, using image 3 The quartz ampoule shown includes a growth chamber 1, a material storage chamber 2, a second suction pipe 4, and a first suction pipe 5. The growth chamber 1 has an inner diameter of 10mm and a length of 220mm, and has two suction pipes. The inner diameter of the constriction of the exhaust pipe 4 is 12 mm.

[0049] S00: Clean the quartz ampoule with deionized water and dry it;

[0050] S01: Measure 120g of mercurous iodide polycrystalline raw material, put it into a quartz ampoule, and evacuate to 2×10 -3 Seal and make hook 6 after Pa, vertically place the quartz ampoule that calomel iodide polycrystalline raw material is housed in a vertical tube furnace and be heated to 310° C., and be incubated for 30 minutes;

[0051] S02: After all the calomel iodide polycrystalline raw materials are melted, the quartz ampoule is taken out, shaken well, placed vertically outside the furnace to cool to room temperature, and the calomel iodide preca...

Embodiment 2

[0057] In this example, using Figure 4 The quartz ampoule shown includes a growth chamber 1, a material storage chamber 2, a third suction pipe 3, a second suction pipe 4, and a first suction pipe 5. The growth chamber 1 has an inner diameter of 10 mm and a length of 240 mm. The inner diameter of the second exhaust pipe 4 is 12 mm.

[0058] S00: Clean the quartz ampoule with deionized water and dry it;

[0059] S01: Measure 120g of mercurous iodide polycrystalline raw material, put it into a quartz ampoule, and evacuate to 2×10 -3 Seal and make hook 6 after Pa, vertically place the quartz ampoule that calomel iodide polycrystalline raw material is housed in a vertical tube furnace and be heated to 370° C., and be incubated for 30 minutes;

[0060] S02: After all the calomel iodide polycrystalline raw materials are melted, the quartz ampoule is taken out, shaken well, placed vertically outside the furnace to cool to room temperature, and the calomel iodide precast ingot 10 i...

Embodiment 3

[0069] In this example, using image 3 The quartz ampoule shown includes a growth chamber 1, a material storage chamber 2, a second suction pipe 4, and a first suction pipe 5. The growth chamber 1 has an inner diameter of 10mm and a length of 220mm, and has two suction pipes. The inner diameter of the constriction of the exhaust pipe 4 is 12 mm.

[0070] S00: Clean the quartz ampoule with deionized water and dry it;

[0071] S01: Measure 120g of mercurous iodide polycrystalline raw material, put it into a quartz ampoule, and evacuate to 2×10 -3 Seal and make hook 6 after Pa, vertically place the quartz ampoule that calomel iodide polycrystalline raw material is housed in a vertical tube furnace and be heated to 370° C., and be incubated for 30 minutes;

[0072] S02: After all the calomel iodide polycrystalline raw materials are melted, the quartz ampoule is taken out, shaken well, placed vertically outside the furnace to cool to room temperature, and the calomel iodide preca...

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Abstract

The invention discloses a method for growth of a mercurous iodide single crystal. The method includes placement of mercurous iodide seed crystals and liquid state mercury, and melting and crystallization of a mercurous iodide precast ingot, and further includes heating and melting of mercurous iodide polycrystalline raw materials and natural cooling to prepare the mercurous iodide precast ingot. The invention further discloses a device employed by the method for growth of the mercurous iodide single crystal. The device consists of a quartz ampoule and a heater. The method and device for growth of mercurous iodide single crystal provided by the invention can prepare high quality and large size mercurous iodide single crystal, which is close to an ideal stoichiometric proportion, and the remaining mercury can be recycled. At the same time, the mercurous iodide precast ingot and the mercurous iodide single crystal can be purified repeatedly so as to obtain mercurous iodide single crystal with higher purity.

Description

technical field [0001] The invention belongs to the field of material engineering, and in particular relates to a method and a device for growing a mercury iodide single crystal. Background technique [0002] Mercury iodide is a non-uniform melting compound, and the composition of the thermal decomposition product is inconsistent with that of the compound. Mercury iodide single crystal is an acousto-optic crystal with excellent performance, which can be used to make laser beam deflectors, modulators, tunable filters, etc. Hertz band has an irreplaceable role in known acousto-optic crystal materials. [0003] Mercury iodide is insoluble in most solvents, so it is not suitable to grow single crystals by solvent method. The main method of growing mercurous iodide single crystal is the physical vapor transport method (PVT method). The gas-phase grown mercurous iodide single crystal often contains defects such as growth stripes, and it is difficult to obtain a single crystal wi...

Claims

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Application Information

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IPC IPC(8): C30B29/12C30B13/00
Inventor 贺毅金应荣陈宝军何知宇张洁龚鹏栾道成吴晓春
Owner XIHUA UNIV
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