Process for manufacturing molybdenum disulfide thin film through two-step method

Abstract

The invention discloses a process for manufacturing a molybdenum disulfide thin film through a two-step method. The process includes the steps that A, the surface of a substrate is cleaned; B, powdered molybdenum trioxide is weighed and placed in a quartz boat, the quartz boat is placed in a tube furnace, and the substrate is placed at the downstream position of the quartz boat containing the molybdenum trioxide; C, powdered sulfur is weighed, a heat tracing cable is wound around a material bottle and placed outside the tube furnace, and a gas inlet pipe and a gas outlet pipe in the material bottle are connected with a gas inlet pipeline of the tube furnace; D, vacuumizing is conducted, Ar is fed in for heating the tube furnace, and primary deposition is conducted; E, after primary deposition is finished, secondary deposition is conducted; F, the material bottle is heated, and Ar is fed in for conducting sulfuration on the molybdenum trioxide; and G, the material bottle and the tube furnace are naturally cooled to the room temperature, and a sample is taken out to be tested. By the adoption of the process, the situation that molybdenum trioxide is sulfurated in advance due to uncontrollable evaporation time of sulfur in a traditional chemical vapor deposition process is avoided, and the whole reaction process can be more controllable by manufacturing the molybdenum disulfide thin film through the two-step method.

Description

technical field [0001] The invention relates to a method for preparing a molybdenum disulfide thin film material, in particular to a two-step method for preparing a molybdenum disulfide thin film. Background technique [0002] Molybdenum disulfide is a new type of two-dimensional semiconductor material. Monolayer molybdenum disulfide is a semiconductor material with a direct band gap. Compared with traditional silicon materials, it has a smaller volume. The field based on molybdenum disulfide Effect transistors have ultra-low static power consumption, and can effectively suppress the short-channel effect faced in the process of device size reduction, and have broad application prospects in integrated circuits and other fields. [0003] At present, the growth of molybdenum disulfide thin film materials is mainly carried out on sapphire substrates by chemical vapor deposition. During the growth process, molybdenum disulfide is usually prepared by vulcanizing molybdenum trioxid...

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Problems solved by technology

[0003] At present, the growth of molybdenum disulfide thin film materials is mainly carried out on sapphire substrates by chemical vapor deposition. During the growth process, molybdenum disulfide is usually prepared by vulcanizing molybdenum trioxide with sulfur vapor. The required sulfur source is usually also placed in the tube furnace, so it is difficult to control the vapor pressure of sulfur during the heating process of the tube furnace, and at the same time, due to the early evaporation of sulfur, the molybdenum trioxide will be vulcanized in advance, so that the molybdenum disulfide The form of deposition on the surface of the substrate makes the whole growth process seriously uncontrollable. Most of the obtained films are polycrystalline films, and the thickness of the film is difficult to control. It is difficult to obtain a uniform single-layer molybdenum disulfide film. Restricts the application of molybdenum disulfide thin films in related fields