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GaAs film growing on Si substrate and preparation method thereof

一种衬底、薄膜的技术，应用在生长在Si衬底上的GaAs薄膜及其制备领域，能够解决很难精确控制成分、厚度晶体质量、影响GaAs薄膜质量、渐变结构缓冲层生长步骤繁琐等问题，达到抑制双晶的形成、便于推广应用、缓冲层结构简单的效果

Active Publication Date: 2015-11-04
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the growth steps of this graded structure buffer layer are often cumbersome, and it is difficult to precisely control the composition, thickness, and crystal quality of each layer of material, which affects the quality of the final GaAs film.

Method used

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  • GaAs film growing on Si substrate and preparation method thereof
  • GaAs film growing on Si substrate and preparation method thereof
  • GaAs film growing on Si substrate and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0048] The preparation method of the GaAs thin film grown on the Si substrate of the present embodiment comprises the following steps:

[0049] (1) Si(111) substrate cleaning, specifically:

[0050] After washing with acetone and deionized water, the organic matter on the substrate surface was removed; the Si substrate was placed in HF:H 2 Ultrasound in O=1:10 solution for 1 minute, then rinse with deionized water to remove surface oxides and organic matter; dry the cleaned Si substrate with high-purity nitrogen;

[0051] (2) Si(111) substrate pretreatment, specifically:

[0052] After cleaning the Si(111) substrate, send it to the sample chamber for pre-degassing for 15 minutes; then send it to the transfer chamber for 0.5 hours at 300°C for degassing, and then send it to the growth chamber after degassing

[0053] (3) Si(111) substrate deoxidized film, specifically:

[0054] After the Si(111) substrate enters the growth chamber, the temperature of the substrate is raised ...

Embodiment 2

[0074] The preparation method of the GaAs thin film grown on the Si substrate of the present embodiment comprises the following steps:

[0075] (1) Si(111) substrate cleaning, specifically:

[0076] After washing with acetone and deionized water, the organic matter on the substrate surface was removed; the Si substrate was placed in HF:H 2 Ultrasonic in O=1:10 solution for 10 minutes, then rinsed with deionized water to remove surface oxides and organic matter; the cleaned Si substrate was dried with high-purity nitrogen;

[0077] (2) Si(111) substrate pretreatment, specifically:

[0078] After the Si(111) substrate is cleaned, it is sent to the sample chamber for pre-degassing for 30 minutes; then sent to the transfer chamber for degassing at 400°C for 2 hours, and then sent to the growth chamber after degassing

[0079] (3) Si(111) substrate deoxidized film, specifically:

[0080] After the Si(111) substrate enters the growth chamber, the temperature of the substrate is r...

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Abstract

The invention discloses a preparation method of a GaAs film growing on a Si substrate. The method comprises the following steps: (1) cleaning the Si substrate (111); (2) pretreating the Si substrate (111); (3) deoxidizing the Si substrate (111); (4) growing a first In<x>Ga<1-x>As buffer layer; (5) annealing the first In<x>Ga<1-x>As buffer layer on situ; (6) growing a GaAs buffer layer; (7) annealing the GaAs buffer layer in situ; (8) growing a second In<x>Ga<1-x>As buffer layer; (9) annealing the second In<x>Ga<1-x>As buffer layer; and (10) growing a GaAs epitaxial film. The invention also discloses the GaAs film growing on the Si substrate. The obtained GaAs film is good in crystal quality and flat in surface, and has positive promoting significance to the preparation of semiconductors and the field of solar cells.

Description

technical field [0001] The invention relates to a GaAs thin film grown on a Si substrate, in particular to a GaAs thin film grown on a Si substrate and a preparation method thereof. Background technique [0002] Since Si has the advantages of mature technology, low price, high mechanical strength and easy large-scale size, the epitaxy of III-V semiconductor materials on Si, especially GaAs, is very attractive. If the epitaxial growth of high-quality GaAs materials on Si can be realized, the production cost of important semiconductor devices such as GaAs solar cells and optoelectronic detectors can be greatly reduced, and the combination of microelectronics and optoelectronics can be realized, which has broad application prospects. However, there are also some problems in epitaxial GaAs thin film on Si substrate. On the one hand, the lattice constant of Si is smaller than that of GaAs, and there is more than 4% lattice mismatch between them, which will cause a large number o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0304H01L31/18
CPCH01L31/0304H01L31/0352H01L31/184H01L31/1864C30B25/10C30B25/183C30B29/42H01L21/02381H01L21/02433H01L21/02463H01L21/02505H01L21/02546H01L21/0262H01L21/02631H01L21/02661H01L31/1852Y02E10/544H01L21/02694H01L21/3245
Inventor 李国强高芳亮温雷张曙光李景灵
Owner SOUTH CHINA UNIV OF TECH
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