Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

LED epitaxial structure and preparation method therefor

An epitaxial structure and temperature control technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the luminous efficiency of GaN-based LEDs, and achieve the effect of improving external quantum efficiency and reducing light absorption effect.

Active Publication Date: 2015-10-28
FOCUS LIGHTINGS SCI & TECH
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both of these aspects will affect the luminous efficiency of GaN-based LEDs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxial structure and preparation method therefor
  • LED epitaxial structure and preparation method therefor
  • LED epitaxial structure and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053]In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0054] Terms used herein, such as "on", "above", "under", "below", etc. to express relative positions in space are for the purpose of description to describe the relative position of one epitaxial layer relative to another epitaxial layer as shown in the drawings. layer relationship. The terms of spatially relative positions may be inte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an LED epitaxial structure and a preparation method therefor. The LED epitaxial structure comprises a substrate, an n-GaN layer located on the substrate and an InGaN / GaN quantum well layer located on the n-GaN layer from bottom to top in order. The InGaN / GaN quantum well layer comprises a plurality of cycles of stacked GaN barrier layers and InGaN potential well layers. A plurality of V-shaped pits are formed in the InGaN / GaN quantum well layer. The LED epitaxial structure also comprises a p-AlGaN layer located on the InGaN / GaN quantum well layer and filling the V-shaped pits in the InGaN / GaN quantum well layer, and an n-InGaN contact layer located on the p-AlGaN layer. The epitaxial layers on the InGaN / GaN quantum well layer are all grown at a temperature lower than GaN quantum barrier, damage to quantum well structures is reduced furthest, a high-quality low-temperature InGaN / GaN quantum well layer is formed, and the internal quantum efficiency is raised. A p-GaN layer grown in a high temperature in the prior art is omitted, therefore the light absorbing effect is reduced, and the external quantum efficiency is raised.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to an LED epitaxial structure and a preparation method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component that can emit light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. And the use is also used as indicator lights, display panels, etc. from the beginning; with the continuous advancement of technology, light-emitting diodes have been widely used in displays, TV lighting decoration and lighting. [0003] In the LED epitaxial process, the GaN material epitaxially gro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/007H01L33/06
Inventor 冯猛陈立人刘恒山
Owner FOCUS LIGHTINGS SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com