Cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and preparation method of cross-coupled oscillator

Abstract

The invention provides a cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and a preparation method of the cross-coupled oscillator. The MESFET with the clamped beam switch is used to replace a traditional MESFET. A pull-down electrode of the clamped beam switch of the cross-coupled oscillator is grounded. The threshold voltages of the two clamped beam switch MESFETs are designed to be equal, and the threshold voltage of the clamped beam switch MESFET is equal to the pull-down voltage of the clamped beam of the clamped beam switch MESFET. When the voltage between the clamped beam and the pull-down electrode plate is more than the absolute value of the threshold voltage, the clamped beam switch is pulled down to the gate and is closely stuck with the gate. Simultaneously, the voltage between the gate and the source is more than the threshold voltage too, and the MESFET is broken over. When the voltage between the clamped beam switch and the pull-down electrode plate of the MESFET is less than the threshold voltage, the clamped beam switch is suspended above the gate and is cut off. The power consumption of the cross-coupled oscillator is reduced.

Description

technical field [0001] The invention provides a GaN (gallium nitride)-based low-leakage current solid-supported beam switch metal-semiconductor field-effect transistor (MESFET) cross-coupled oscillator, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the rapid development of modern communications, high-stability and high-performance oscillators have become one of the key components that determine the performance of the system. Oscillators are used in a wide range of applications, such as microprocessors, cellular phones, and test equipment. Especially in military reconnaissance, radar, and communication fields, signal sources need to be used as carriers for increasingly complex baseband information. Higher requirements are placed on the stability of the oscillator. The oscillator works at a very high frequency, which will cause the power consumption problem of the chip to become more and more obvious. Too high powe...

AI Technical Summary

Problems solved by technology

The oscillator works at a very high frequency, which will cause the power consumption problem of the chip to become more and more obvious. Too high power consumption will put higher requirements on the heat dissipation of the chip, and will also affect the performance of the chip.

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