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Preparation method for graphene-based three-element composite material

An alkenyl ternary and graphene technology, applied in electrical components, cable/conductor manufacturing, circuits, etc.

Inactive Publication Date: 2015-10-21
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former CVD preparation method can obtain high-quality large-scale graphene sheets with a relatively perfect structure, so the performance of the corresponding transparent conductive film is comparable to that of commercial ITO, but the conditions for preparing graphene by the CVD method are relatively harsh ( Such as high temperature around 1000 ℃), and involves film transfer process, so the large-scale preparation of transparent conductive films at low cost is limited by equipment, and there are great difficulties
Although the latter method can be applied to large-scale production based on the post-processing method based on liquid phase dispersion, the size of the graphene sheets obtained based on the reduction of precursors such as graphene oxide, chemically reduced graphene, and exfoliated graphene is too small and the graphene Many structural defects on the chip lead to a much higher sheet resistance than ITO films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 0.1 mg / ml graphene, 0.2 mg / ml silver nanowires, and 1 mg / ml poly(3,4-ethylenedioxythiophene): polystyrene sulfonate mixed solution were treated for 10 minutes by means of ultrasonic dispersion, Then it was dispersed on the PET substrate by spin-coating method at a rotation speed of 3000 rpm for 40 s.

[0021] The prepared stone ternary composite transparent conductive film has an average resistance of 105Ω / □; and a light transmittance of 88% at a wavelength of 550nm.

Embodiment 2

[0023] A 0.5 mg / ml graphene solution was spin-coated on a PET substrate, dried in an oven at 60 °C, and then a 0.2 mg / ml silver nanowire solution was spin-coated on the substrate, then dried in an oven at 60 °C, and finally Spin-coat 0.4 mg / ml poly(3,4-ethylenedioxythiophene): polystyrene sulfonate solution at 4500 rpm for 60 s.

[0024] The prepared stone ternary composite transparent conductive film has an average resistance of 200Ω / □; and a light transmittance of 90% at a wavelength of 550nm.

Embodiment 3

[0026] Sonicate the mixed solution of 0.3 mg / ml graphene and 0.6 mg / ml silver nanowires for 10 min, then immerse the PET substrate in the solution for 5 min, then take it out and dry it in an oven, repeat the above steps 10 times; 1 mg / ml poly(3,4-ethylenedioxythiophene): polystyrene sulfonate solution was spin-coated on the above PET substrate at a rotation speed of 4000 rpm for 45 s.

[0027] The prepared stone ternary composite transparent conductive film has an average resistance of 163Ω / □; and a light transmittance of 86% at a wavelength of 550nm.

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Abstract

The invention relates to a preparation method for graphene-based three-element composite transparent conductive thin-film. The three-element composite film comprises graphene, silver nanowires and poly(3,4-ethylenedioxy thiophene): polystyrene sulfonate. Graphene has advantages of excellent optical and electrical properties and low cost. The size of a graphene sheet obtained on the basis of reduction of oxidized graphene, chemically reduced graphene, stripped graphene and other precursors is too small, and the graphene sheet has multiple structural defects so that resistance of the graphene thin-film is much higher than that of a commercial indium tin oxide thin-film. According to the method, a mode that the silver nanowires, poly(3,4-ethylenedioxy thiophene): polystyrene sulfonate and graphene are composite is adopted so that photoelectric performance of the graphene-based transparent conductive thin-film is enhanced. The treatment process based on liquid phase dispersion can be applied to large-scale production, and the material also has flexibility so that the material can be used as substitute material of indium tin oxide to be applied to a flexible transparent device.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a transparent conductive graphene film and a preparation method and application thereof. Background technique [0002] In recent years, flexible electronic devices have become popular in the market. In 2012, Nokia Corporation exhibited a new flexible concept mobile phone. Compared with traditional mobile phones, this mobile phone can be bent at will, and has unique functions and novelties, which has aroused great interest from consumers. At present, all electronic products will evolve towards thinner and more flexible. According to the forecast of ABI Research, in 2018, the global shipment of wearable devices will reach 485 million units, with sales of 19 billion US dollars. However, most of the transparent conductive films, an important part of wearable devices that are widely used now, are made of indium tin oxide (ITO). Although its light transm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00
Inventor 何丹农杨扬张春明王丹吴晓燕金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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