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Platinum doping method in fast-recovery diode preparing technologies

A recovery diode, platinum doping technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as hindering platinum, large platinum consumption, and increasing manufacturing costs, and achieve Vf and Trr optimization, overcoming technology Bias, the effect of achieving tunability

Active Publication Date: 2015-10-14
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the fast recovery diode, the amount of platinum used as the recombination center is very small, and platinum sputtering or platinum evaporation causes excessive consumption of platinum, and too much platinum on the silicon wafer causes waste and increases the production cost; while platinum evaporation Or platinum sputtering is physically deposited on the surface of the silicon wafer, resulting in stress and excessive tension, which affects the activation of platinum and prevents platinum from becoming an effective recombination center, resulting in poor performance of fast recovery diodes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] A platinum doping method in a fast recovery diode preparation process, said method comprising the steps of:

[0046] (1) Soak the silicon wafer in a platinum-doped soaking solution at 5°C for 2000s to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 0.01 g of platinum per liter of deionized water Ammonium chloroplatinite, add 1000mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of the hydrofluoric acid is 30v%);

[0047] (2) Place the platinum ion-adsorbed silicon wafer obtained in step (1) in an infrared annealing furnace, and anneal at 100°C for 2000s to obtain a platinum-doped silicon material, which is designated as silicon wafer I.

Embodiment 2

[0049] A platinum doping method in a fast recovery diode preparation process, said method comprising the steps of:

[0050] (1) Soak the silicon wafer in a platinum-doped soaking solution at 50°C for 0.1s to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 10 g of platinum per liter of deionized water For ammonium chloroplatinite, add 0.1 mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of the hydrofluoric acid is 30v%);

[0051] (2) Place the platinum-ion-adsorbed silicon wafer obtained in step (1) in an infrared annealing furnace, pass through 30 SLPM of nitrogen gas, and anneal at 2000°C for 1 second, then transfer the silicon wafer to a tube furnace, pass Inject nitrogen gas at 20 SLPM, and anneal at 1000°C for 1 min to obtain a platinum-doped silicon material, which is designated as silicon wafer II.

Embodiment 3

[0053] A platinum doping method in a fast recovery diode preparation process, said method comprising the steps of:

[0054] (1) Soak the silicon wafer in a platinum-doped soaking solution for 1000s at 30°C to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 5g of chlorine per liter of deionized water For ammonium platinite, add 500mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of said hydrofluoric acid is 30v%);

[0055] (2') Place the silicon chip that has adsorbed platinum ions obtained in step (1) into hydrofluoric acid with a concentration of 20v% for 1 min and clean it to remove free platinum ions on the surface of the silicon chip;

[0056] (2) Place the silicon wafer obtained in step (2') in an infrared annealing furnace, pass 15SLPM of nitrogen gas, anneal at 1000°C for 500s, then transfer the silicon wafer to a tube furnace, and pass 1 SLPM of nitrogen gas , and annealed at 450°C for 120...

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Abstract

The invention relates to a platinum doping method in fast-recovery diode preparing technologies. The method comprises the following steps of (1) immersing a silicon chip inside a platinum doping solution to acquire a silicon chip with platinum ions absorbed; and (2) performing infrared annealing to acquire a platinum-doped silicon material. The method provided in the invention overcomes the technical prejudice of adopting evaporation or sputtering methods for platinum doping in the prior art and adopts the solution to perform platinum doping on the silicon chip material in an innovative way. A new idea for the platinum doping method in fast-recovery diode preparing technologies is provided.

Description

technical field [0001] The invention belongs to the field of diode preparation, and in particular relates to a platinum doping method in the process of preparing a fast recovery diode and the prepared fast recovery diode. Background technique [0002] Fast recovery diode (FRD for short) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in electronic circuits such as switching power supplies, PWM pulse width modulators, and frequency converters as high-frequency rectifier diodes , Freewheeling diodes or damping diodes are used. [0003] Among fast recovery diodes, silicon fast recovery diodes are widely used. In order to increase the switching speed, reduce the reverse recovery time T rr , the traditional method is to use heavy metal doping (such as gold doping, platinum doping) and electron radiation to introduce recombination centers into the diode in a large area or even as a whole to eliminate excess carriers...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329
Inventor 王学良陈宏
Owner WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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