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Method for electrochemical codeposition of CZTS (Se) films in deep eutectic solution

A deep eutectic and electrochemical technology, applied in the field of solar cells, can solve the problems of lower conversion efficiency and disordered crystal structure, and achieve the effects of low vapor pressure, low dissolution temperature and good conductivity

Active Publication Date: 2015-10-07
CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method, that is, co-plating of quaternary copper, zinc, tin and sulfur in aqueous solution is feasible, but potassium tartrate must be added as a complexing agent to adjust the plating potential of each element, so that it is difficult to form large-scale grains (>1μm) after annealing of the precursor film. ), the film as a whole presents a finely divided (<0.2μm) disordered crystalline structure, thereby reducing its conversion efficiency

Method used

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  • Method for electrochemical codeposition of CZTS (Se) films in deep eutectic solution
  • Method for electrochemical codeposition of CZTS (Se) films in deep eutectic solution
  • Method for electrochemical codeposition of CZTS (Se) films in deep eutectic solution

Examples

Experimental program
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Effect test

Embodiment 1

[0046] (1) Preparation of deep eutectic solution

[0047] Mix choline chloride and urea evenly, heat to 90°C, stir for 6 hours, cool to room temperature, and obtain a deep eutectic solution; the molar ratio of choline chloride to solvent is 1:2;

[0048] (2) Preparation of plating solution

[0049] Add copper chloride, zinc chloride, tin chloride and thioacetamide to the deep eutectic solution prepared in step (1), stir evenly with magnetic force, heat to 80°C, and continue stirring for 2 hours to obtain a uniformly dispersed plating solution ; The concentration of copper chloride in the plating solution is 8mmol / L, the concentration of zinc chloride is 12mmol / L, the concentration of tin chloride is 12mmol / L, and the concentration of thioacetamide is 32mmol / L;

[0050] (3) Preparation of CZTS film prefabricated layer

[0051] The soda-lime glass substrate material with a 1 μm thick Mo electrode was ultrasonically cleaned three times in 10% NaOH solution and absolute ethanol,...

Embodiment 2

[0061] (1) Preparation of deep eutectic solution

[0062] Mix choline chloride and ethylene glycol evenly, then add an appropriate amount of deionized water, heat to 90°C, stir for 6 hours, cool to room temperature, and obtain a deep eutectic solution; the molar ratio of choline chloride to solvent 1: 2.5, the volume ratio of the solvent and deionized water is 7: 2;

[0063] (2) Preparation of plating solution

[0064] Add copper sulfate, zinc sulfate, tin sulfate and selenic acid to the deep eutectic solution prepared in step (2), stir evenly with magnetic force, heat to 70° C., and continue stirring for 2 hours to obtain a uniformly dispersed plating solution; the plating solution The concentration of copper sulfate in the medium is 10mmol / L, the concentration of zinc sulfate is 15mmol / L, the concentration of tin sulfate is 15mmol / L, the concentration of selenic acid is 40mmol / L;

[0065] (3) Preparation of CZTSe thin film prefabricated layer

[0066] The Mo metal foil su...

Embodiment 3

[0076] (1) Preparation of deep eutectic solution

[0077] Mix choline chloride and oxalic acid evenly, then add an appropriate amount of deionized water, heat to 50°C, stir for 4 hours, cool to room temperature, and obtain a deep eutectic solution; the molar ratio of the choline chloride to the solvent is 1 : 1, the volume ratio of the solvent and deionized water is 7: 3;

[0078] (2) Preparation of plating solution

[0079] Add copper nitrate, zinc nitrate, tin nitrate and selenium chloride to the deep eutectic solution prepared in step (1), stir evenly with magnetic force, heat to 60°C, and continue stirring for 3h to obtain a uniformly dispersed plating solution; The concentration of copper nitrate in the liquid is 20mmol / L, the concentration of zinc nitrate is 25mmol / L, the concentration of tin nitrate is 30mmol / L, the concentration of selenium chloride is 60mmol / L;

[0080] (3) Preparation of CZTSe thin film prefabricated layer

[0081] The Ti metal foil substrate mate...

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Abstract

The invention discloses a method for electrochemical codeposition of CZTS (Se) films in deep eutectic solution. The method adds any one or two of sulfide and selenide, copper salt, zinc salt and tin salt in the deep eutectic solution as electroplating solution for electric deposition of CZTS (Se) prefabricated layer films. The method uses the deep eutectic solution system as the electroplating solution without additionally adding a complexing agent and an additive; and the obtained CZTS (Se) films are compact, level, uniform, few in impurity residues and not liable to be oxidized, are excellent solar cell absorption layer materials, and have higher photoelectric conversion rate.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a preparation method of a solar cell absorbing layer material, in particular to a preparation method of a CZTS (Se) thin film. Background technique [0002] With the development of the economy, the traditional energy supply has been unable to meet the growing demand of human beings for energy. Solar energy is the most abundant energy source among many renewable energy sources, and its proportion in the future energy structure will increase. It is conservatively estimated that this proportion will exceed 60% in 2100. Solar photovoltaic power generation is an important way to develop solar energy and become a new energy source. At present, the mainstream product in the photovoltaic market is still silicon solar cells. develop. Therefore, the study of new green, high-efficiency and low-cost solar cells has become an important topic for future energy development. [0003] Copper zinc ti...

Claims

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Application Information

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IPC IPC(8): C25D3/56
Inventor 廖成何绪林叶勤燕刘焕明梅军刘江
Owner CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
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