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Re2x/3(Ba0.06Bi0.47Na0.47)1-xMeyTi1-yO3 leadless antiferroelectric high-energy density ceramic and preparation method thereof

A high energy storage density, anti-ferroelectric technology, applied in the field of energy storage ceramic capacitor manufacturing, can solve the problems of large loss, low energy storage value, and low withstand voltage

Active Publication Date: 2015-09-30
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Lead-free ferroelectric ceramics, mainly NaNbO 3 、BiNbO 4 , but these two types of materials have relatively large loss, so that the withstand voltage is small, so the energy storage value is low
Currently, some people use Bi 0.5 Na 0.5 TiO 3 with K 0.5 Na 0.5 NbO 3 Solid solution has achieved antiferroelectric performance, but its energy storage value is still low, and more modification is needed, so the following invention content

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] (1) Using traditional powder synthesis technology to synthesize Sm 0.04 / 3 Ba 0.0588 Bi 0.4606 Na 0.4606 TiO 3 Powder: choose Sm with high purity (≧99.8%) 2 o 3 、BaCO 3 、 Bi 2 o 3 、Na 2 CO 3 、TiO 2 Powder as raw material, according to Sm 2 o 3 : BaCO 3 : Bi 2 o 3 : Na 2 CO 3 : TiO 2 =0.02 / 3: 0.0588: 0.2303: 0.2303: 1 molar ratio mixed, then fully mixed in a high-energy ball mill, taken out and dried.

[0015] (2) Grinding, holding at 980°C for 2 hours to synthesize Sm 0.04 / 3 Ba 0.0588 Bi 0.4606 Na 0.4606 TiO 3 compound, ground again to obtain Sm 0.04 / 3 Ba 0.0588 Bi 0.4606 Na 0.4606 TiO 3 Disperse the powder evenly.

[0016] (3) Put the powder obtained in (2) into the graphite grinding tool of the plasma discharge sintering furnace, pressurize it to 50MPa, then rapidly raise the temperature of the plasma discharge sintering furnace to 900°C and keep it for 10 minutes, and the Sm 0.04 / 3 Ba 0.0588 Bi 0.4606 Na 0.4606 TiO 3 Lead-free antife...

Embodiment 2

[0019] (1) Using traditional powder synthesis technology to synthesize Sm 0.02 Ba 0.0582 Bi 0.4559 Na 0.4559 Zr 0.1 Ti 0.9 o 3 Powder: choose Sm with high purity (≧99.8%) 2 o 3 、BaCO 3 、 Bi 2 o 3 、Na 2 CO 3 , ZrO 2 、TiO 2 Powder as raw material, according to Sm 2 o 3 : BaCO 3 : Bi 2 o 3 : Na 2 CO 3 : ZrO2 : TiO 2 = 0.01: 0.0582: 0.22795: 0.22795: 0.1: 0.9 molar ratio mixed, then fully mixed in a high-energy ball mill, taken out and dried.

[0020] (2) Grinding, holding at 1060°C for 5 hours to synthesize Sm 0.02 Ba 0.0582 Bi 0.4559 Na 0.4559 Zr 0.1 Ti 0.9 o 3 compound, ground again to obtain Sm 0.02 Ba 0.0582 Bi 0.4559 Na 0.4559 Zr 0.1 Ti 0.9 o 3 Disperse the powder evenly.

[0021] (3) Put the powder obtained in (2) into the graphite grinding tool of the plasma discharge sintering furnace, pressurize it to 40MPa, and then rapidly raise the temperature of the plasma discharge sintering furnace to 1000°C and keep it for 5 minutes to prepare ...

Embodiment 3

[0024] (1) Using traditional powder synthesis technology to synthesize Sm 0.4 / 3 Ba 0.048 Bi 0.376 Na 0.376 Zr 0.05 Ti 0.95 o 3 Powder: choose Sm with high purity (≧99.8%) 2 o 3 、BaCO 3 、 Bi 2 o 3 、Na 2 CO 3 , ZrO 2 、TiO 2 Powder as raw material, according to Sm 2 o 3 : BaCO 3 : Bi 2 o 3 : Na 2 CO 3 : ZrO 2 : TiO 2 = 0.2 / 3: 0.048:0.188: 0.188: 0.05: 0.95 molar ratio mixed, then fully mixed in a high-energy ball mill, taken out and dried.

[0025] (2) Grinding, holding at 1060°C for 5 hours to synthesize Sm 0.4 / 3 Ba 0.048 Bi 0.376 Na 0.376 Zr 0.05 Ti 0.95 o 3 compound, ground again to obtain Sm 0.4 / 3 Ba 0.048 Bi 0.376 Na 0.376 Zr 0.05 Ti 0.95 o 3 Disperse the powder evenly.

[0026] (3) Put the powder obtained in (2) into the graphite grinding tool of the plasma discharge sintering furnace, pressurize it to 40MPa, and then rapidly raise the temperature of the plasma discharge sintering furnace to 1000°C and keep it for 5 minutes to prepare S...

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Abstract

The invention relates to Re2x / 3(Ba0.06Bi0.47Na0.47)1-xMeyTi1-yO3 leadless antiferroelectric high-energy density ceramic and a preparation method thereof. x is greater than or equal to 0.02 and is less than or equal to 0.2, y is greater than or equal to 0 and is less than or equal to 0.1, Re represents one of La, Sm, Nd, Gd, Dy and Er and Me represents one of Zr and Sn. The preparation method comprises synthesizing Re2x / 3(Ba0.06Bi0.47Na0.47)1-xMeyTi1-yO3 powder by a traditional powder synthesis technology, and preparing the Re2x / 3(Ba0.06Bi0.47Na0.47)1-xMeyTi1-yO3 leadless antiferroelectric high-energy density ceramic by a spark plasma sintering (SPS) technology. The preparation method is simple and efficient and has energy density of 0.7-1.6J / cm<3> calculated based on a ferroelectric hysteresis loop.

Description

technical field [0001] The invention belongs to the field of energy storage ceramic capacitor manufacturing, and specifically relates to a Re 2x / 3 (Ba 0.06 Bi 0.47 Na 0.47 ) 1-x Me y Ti 1-y o 3 Lead-free antiferroelectric high energy storage density ceramics and a preparation method thereof. Background technique [0002] Ferroelectric ceramics have been widely used in both military and civilian fields due to their advantages of convenient preparation, low cost and stable performance. For the field of high-density energy storage, the application characteristics of ferroelectric ceramic materials are mainly in its ferroelectric-antiferroelectric phase transition. In traditional antiferroelectric ceramic materials, lead, which accounts for a large proportion, is highly toxic. After Japan and the EU actively legislated to ban the use of various lead-containing electronic devices, countries around the world have also responded positively. Therefore, lead-free anti Resear...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/475C04B35/622
Inventor 冯琴袁昌来周星星杨涛周昌荣许积文黎清宁陈国华
Owner GUILIN UNIV OF ELECTRONIC TECH
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