Method and apparatus for preparing black silica by adopting lattice scanning

Abstract

The invention relates to a method and apparatus for preparing black silica by adopting lattice scanning. The method includes the following steps that: 1, a silicon wafer is arranged in a doped material-containing sample chamber; 2, a single laser beam of a pulse laser passes through a diaphragm, a reflector, a half wave plate, a polarizer, a shutter, a beam expanding mirror, a focusing lens, a Dammann grating and the like, so that lattice laser can be obtained; 3, the lattice laser irradiates on the surface of the silicon wafer, and a computer controls the opening and closing of the shutter and the movement of a three-dimensional translational platform, and therefore, lattice scanning can be realized, and a black silica material of which the surface is of a micro pointed cone structure can be obtained. According to the method and apparatus of the invention, the Dammam grating is adopted, and the single beam laser can be converted into two-dimensional and equal-light intensity array beams; when the Dammam grating splits the laser beam, the influence of chromatic dispersion in the light splitting process of an ordinary semi-transmittance and semi-reflection mirror can be avoided, and the quality of the split light beams can be ensured; and point-by-point scanning adopted for preparing the black silica is converted into lattice scanning, and therefore, the preparation efficiency of the black silica can be greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic material preparation, in particular to a method and device for preparing black silicon by lattice scanning. Background technique [0002] Black silicon refers to a material with a periodic microstructure on the surface obtained by etching single crystal silicon by physical or chemical methods. Black silicon has a high absorption rate for visible light and near-infrared light, and the absorption rate can reach 90% in the range of 0.25 μm to 2.5 μm. In 2005, the black silicon photodiode detector prepared by the research team of Professor Eric Mazur irradiated n(111) silicon substrate with femtosecond laser, under the reverse bias of 0.5V at room temperature, the photoelectric responsivity at 1000nm was 120A / W, two orders of magnitude higher than commercial silicon detectors (Opt. Lett., 2005, 30(14), 1773). Due to its excellent properties, black silicon materials have great potential i...

AI Technical Summary

Problems solved by technology

[0016] The purpose of the present invention is to solve the problem that the traditional point-by-point scanning method of preparing black silicon has a slow processing speed and takes a long time when preparing large-area black silicon, and provides a method and device for preparing black silicon by dot-matrix scanning

Images