Semiconductor device and semiconductor device packaging body using the semiconductor device

Abstract

A semiconductor device comprises an active layer, a source electrode, a drain electrode, a grid electrode, an interlayer dielectric layer, a source electrode interface layer, at least one inter-source-electrode plug, a drain electrode interface layer, at least one inter-drain-electrode plug, a grid electrode interface layer and at least one inter-grid-electrode plug. The active layer is made of III-V compound semiconductor materials. The source electrode and the drain electrode are located on the active layer. The grid electrode is located on the active layer and arranged between the source electrode and the drain electrode. The interlayer dielectric layer covers the source electrode, the drain electrode and the grid electrode. The source electrode interface layer, the drain electrode interface layer and the grid electrode interface layer are all located on the interlayer dielectric layer. The inter-source-electrode plug is electrically connected with the source electrode and the source electrode interface layer. The inter-drain-electrode plug is electrically connected with the drain electrode and the drain electrode interface layer. The inter-grid-electrode plug is electrically connected with the grid electrode and the grid electrode interface layer. A semiconductor device packaging body using the semiconductor device is also disclosed.

Description

technical field [0001] The present invention relates to a semiconductor device. Background technique [0002] Field Effect Transistor (Field Effect Transistor) is a switching element that utilizes electric field effect in materials to control current, and is widely used in circuits of semiconductor elements. Specifically, the field effect transistor includes a gate electrode, a source electrode, a drain electrode and an active layer, and the source electrode and the drain electrode are respectively located on opposite sides of the active layer. By controlling the voltage of the gate to affect the switching of the channel, a current can be conducted between the source and the drain to be in an on state. [0003] Generally speaking, according to different designs, parasitic capacitances exist inside the field effect transistors, and these parasitic capacitances can degrade the operation characteristics of the field effect transistors. On the other hand, in the packaging stru...

AI Technical Summary

Problems solved by technology

The drain is on the active layer

Images