Trench gate type igbt device and manufacturing method thereof

Abstract

The invention provides a trench gate IGBT device and a manufacturing method thereof. The device comprises an N-type doping drift region, a P-type doping collector region which directly or indirectly electrically contacts with the back surface of the drift region, a P-type doping base region which directly or indirectly electrically contacts with the front surface of the drift region, a first trench gate structure which longitudinally extends into the drift region from the surface of the base region along a Z direction, an N-type doping emitter region which is in the base region and is on a side or two sides of the first trench gate structure, a second trench gate structure which longitudinally extends into the drift region from the surface of the base region along the Z direction, and a third trench gate structure which longitudinally extends into the drift region from the surface of the base region along the Z direction. One side or two sides of the third trench gate structure have N-type doping similar emitter regions. The second trench gate structure and the similar emitter regions are electrically connected with the emitter region. The third trench gate structure is electrically connected with the emitter region. The trench gate IGBT device can effectively reduce input capacitance, and robustness of the device is adjustable.

Description

technical field [0001] The invention relates to an IGBT device structure and a manufacturing method thereof, in particular to a trench gate type IGBT device and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device that attracts the most attention and develops rapidly in recent years. IGBT devices have the characteristics of high gate input impedance and wide safe working area when they are turned on and off. Therefore, IGBT devices are widely used in motor drives, electric welding machines, induction cookers, and UPS power supplies. [0003] With the continuous development of IGBT devices, the requirement to increase the current density per unit area is becoming increasingly urgent, so engineers and technicians in this field have proposed trench IGBT devices. Compared with the original planar gate IGBT device, the current density per unit area of ​​the trench gate IGBT device is great...

AI Technical Summary

Problems solved by technology

Compared with the original planar gate IGBT device, the current density per unit area of ​​the trench gate IGBT device is greatly increased, and the area of ​​the device is correspondingly reduced. However, due to the increase in trench density, the input capacitance of the current trench gate IGBT device increased substantially, resulting in problems that are not easily actuated

In addition, since the current of conventional trench IGBT devices is much higher than that of planar gate IGBT devices, the robust performance of trench IGBT devices is also poor.

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