GaN high electron mobility transistor (HEMT) technology based monolithic integration active quasi circulator
A monolithic integration and circulator technology, which is applied to amplifiers with semiconductor devices/discharge tubes, amplifiers, waveguide devices, etc., can solve the problems of unbearable power amplifier power and small power capacity, and achieve convenient system or module Design, large power capacity, and reduced system area
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[0035] In this embodiment, the monolithic integrated active quasi-circulator based on the GaN HEMT process has an overall monolithic circuit size of 2.5mm×1.5mm, and the isolation resistor R in the lumped power divider 2 PD Using a 100-ohm thin film resistor, the MMIC lumped inductance in the lumped power divider 2 and the fourth inductance L 4 and the fifth inductance L 5 The size is 4.83nH, the fifth capacitor C of the MMIC lumped capacitor 5 and the sixth capacitor C 6 The size is 1.15pF, the seventh capacitor C 7 The size is 2.16pF.
[0036] The total gate width of the GaN HEMT in the power amplifier of this embodiment is 8×100 μm, and a conjugate matching design is adopted between the power amplifier and the power divider to realize maximum power transmission. In terms of DC bias circuit design, TFR resistors are used in the DC bias circuit of the gate of the amplifier, and the voltage is directly applied to the first grid bias input terminal V through a DC probe. gg...
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