Manufacturing method of inversion structure of III semiconductor light-emitting device

Abstract

The application discloses a manufacturing method of an inversion structure of a III semiconductor light-emitting device. The manufacturing method comprises the following steps: growing a substrate, a buffer layer, an n type nitride semiconductor layer, an active layer, and a p type nitride semiconductor layer successively from bottom to top to form an epitaxial structure; depositing a transparent conductive layer; carrying out yellow-light etching process and definition to form an isolation slot; depositing a first insulation layer structure; depositing a P type contact metal unit and an N type contact metal unit simultaneously; depositing a second insulation layer structure; depositing an inverted P type electrode and an inverted N type electrode and removing a photoresistor by using a stripping process so as to obtain a wafer; and carrying out reduction, scribing, splitting, testing ,and sorting on the wafer. According to the invention, the linear convex table surface technology is used for replacing the multi-hole vias technology in the prior art. The first insulation layer structure is a Bragg reflection layer-metal level-multilayer oxide insulating layer unit and serves as a reflector structure and an insulation layer, and thus an inverted reflector structure design and a first insulation layer are replaced and a metal protection layer is also removed.

Description

technical field [0001] The present application relates to the technical field of semiconductor lighting, in particular, to a method for fabricating a flip-chip structure of a Group III semiconductor light-emitting device. Background technique [0002] Traditional light-emitting diodes adopt a front-mount structure. Generally, the transparent conductive layer is made of high-transmittance materials, such as ITO, AZO, etc., and the electrodes are generally made of Cr / Pt / Au, etc. However, in the flip-chip structure, the light excited by the active layer It is directly emitted from the substrate on the other side of the electrode, so the requirement for the P-type electrode is changed to a highly reflective material covering the entire p-type nitride semiconductor layer as a mirror structure. The first is on the p-type nitride semiconductor layer Plating a transparent electrode with high transmittance plus high reflective metal, such as ITO / Ag, etc., the other is to directly coa...

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Problems solved by technology

[0002] Traditional light-emitting diodes adopt a front-mount structure. Generally, the transparent conductive layer is made of high-transmittance materials, such as ITO, AZO, etc., and the electrodes are generally made of Cr / Pt / Au, etc. However, in the flip-chip structure, the light excited by the active layer It is directly emitted from the substrate on the other side of the electrode, so the requirement for the P-type electrode is changed to a highly reflective material covering the entire p-type nitride semiconductor layer as a mirror structure. The first is on the p-type nitride semiconductor layer Plating a transparent electrode with high transmittance plus high reflective metal, such as ITO / Ag, etc., the other is to directly coat a high reflective metal on the p-type nitride semiconductor layer as an ohmic contact layer and a mirror, For example, Ag, Al, etc., no matter which method is selected, a metal protective layer (guard metal) must be used later to cover the highly reflective material to avoid instability, and then etch multiple holes (vias). The schematic diagram of the structure is as follows figure 1 , the entire surface is covered with the first insulating layer, the n-type nitride semiconductor layer and the metal protection layer are opened to access the n-type nitride semiconductor layer and the metal protection layer, and then the P-type contact metal and the N-type contact metal are plated, and the entire surface is covered with the second insulating layer, and the hole is accessed to access the P Type contact metal and N-type contact metal, and finally flip-chip P-type electrodes and N-type electrodes are plated. Due to the relatively high precision of etching holes, the process is complicated and the production cost is also high.

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