Preparation method for tin-doped indium phosphide quantum dot sensitized solar cell

Abstract

The invention discloses a preparation method for a tin-doped indium phosphide quantum dot sensitized solar cell. The preparation method comprises the following steps: (1) mixing Sn<2+>, In <3+> and long-chain alkyl acid to obtain a mixture, and adding the mixture into an octadecene solvent to mix to obtain a mixed solution; (2) preparing the mixed solution into an carboxylic acid indium precursor solution containing dopant ions; (3) adding tri (trimethyl silicyl) phosphine to prepare a tin-doped indium phosphide quantum dot solution; (4) separating and purifying the indium phosphide quantum dot solution; (5) transferring the indium phosphide quantum dot solution into a water phase from an oil phase; (6) preparing a quantum dot sensitized FTO / TiO2 electrode plate; (7) assembling the quantum dot sensitized FTO / TiO2 electrode plate with a cuprous sulfide electrode plate, and injecting polysulfide electrolyte to obtain the tin-doped indium phosphide quantum dot sensitized solar cell. The preparation method is reasonable in design and convenient to operate, and the short-circuit current and the photoelectric conversion efficiency of the cell are remarkably improved, and therefore, the preparation method is suitable for being popularized and applied.

Description

technical field [0001] The invention relates to a quantum dot sensitized solar cell, in particular to a preparation method of a tin-doped indium phosphide quantum dot sensitized solar cell. Background technique [0002] With the decrease of earth's fossil energy, the increasing severity of the greenhouse effect and the increasing demand of human beings for energy, the research of new materials, new technologies and new methods for "green" new energy is becoming more and more important. Efficient use of solar power generation is one of the goals pursued by human beings, especially solar photovoltaic power generation. At present, the laboratory efficiency of solar cells based on monocrystalline silicon and polycrystalline silicon is close to its theoretical upper limit. The market is mainly based on crystalline silicon solar cells. Thin-film batteries are also being promoted and used. The highest laboratory efficiency of these thin-film batteries has reached more than 20%...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a preparation method of tin-doped indium phosphide quantum dot sensitized solar cells, which mainly solves the problem of low short-circuit current in existing InP quantum dot sensitized solar cells

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