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A kind of igbt with superjunction structure and preparation method thereof

A technology of collector region and gate trench, which is applied in the field of IGBT, can solve the problems of large saturation voltage drop and achieve the effects of reducing saturation voltage drop, shortening processing time, and improving breakdown voltage

Active Publication Date: 2020-01-21
SHANGHAI TUNA ELECTRIC MECHANIC EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a serious defect in this structure, that is, the electric field is distributed in one dimension in silicon, that is, the electric field is distributed along the Y direction, and this electric field distribution still has a large saturation voltage drop.

Method used

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  • A kind of igbt with superjunction structure and preparation method thereof
  • A kind of igbt with superjunction structure and preparation method thereof
  • A kind of igbt with superjunction structure and preparation method thereof

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] Such as figure 1 As shown, an IGBT with a super junction structure, the IGBT with a super junction structure includes a collector 1, a drift region 2, a P-type base region 3 and an N-type emitter region 4, and the P-type base A gate trench 5 is provided in the region 3 and the N-type emitter region 4, a gate electrode 6 is provided in the gate trench 5, and a P-type electrode 6 is provided between the bottom of the gate trench 5 and the collector elect...

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Abstract

The present invention discloses an IGBT having with a super junction structure. The IGBT having the super junction structure comprises a collector, a drift region, a P-type base region and an N-type emitter region, wherein, gate grooves are formed in the P-type base region and the N-type emitter region, gate electrodes being arranged in the gate grooves; P-type regions are formed between the bottom of the gate grooves and the collector; the P-type regions are respectively connected with the bottom of the gate grooves and the collector; and spaces between the adjacent P-type regions are filled with an insulating medium. The present invention further discloses a preparation method of the IGBT having the super junction structure. The IGBT having the super junction structure provided by the present invention can generate a transverse electric field so as to improve the breakdown voltage and reduce the saturation voltage drop of a device. The preparation method provided by the present invention has the advantage of short processing time.

Description

technical field [0001] The invention relates to an IGBT, in particular to an IGBT with a super junction structure and a preparation method thereof. Background technique [0002] IGBT is the abbreviation of Isolated Gate Bipolar Transistor. It is a new composite power electronic device that was born in the early 1980s and developed rapidly in the 1990s. After 1980, the mainstream semiconductor power devices in the world have developed from thyristors to more advanced insulated gate bipolar transistors (IGBTs). [0003] Usually a higher breakdown voltage will increase the saturation voltage drop Vce(sat), resulting in a decrease in the efficiency of applications such as inverters. In order to compromise a higher breakdown voltage and a lower saturation voltage drop, the new field resistance trench type (Field Stop Trench) IGBT came into being, figure 2 is a schematic diagram of a common IGBT. [0004] The field resistance trench IGBT is the most popular IGBT structure at pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0634H01L29/66348H01L29/7398
Inventor 杨凡力
Owner SHANGHAI TUNA ELECTRIC MECHANIC EQUIP CO LTD
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