Spin-hall-effect-assisted spin-transfer torque nonvolatile trigger

Abstract

The invention relates to a spin-hall-effect-assisted spin-transfer torque nonvolatile trigger which is composed of a pair of spin-hall-effect-assisted spin-transfer torque magnetic tunnel junctions, namely SHE-STT-MTJ1 and SHE-STT-MTJ2, a pair of NMOS transistors, namely N3 and N4, an STT-writing circuit, an SHE-writing circuit, a reading circuit and a slave register, wherein the T1 ends of the SHE-STT-MTJ1 and the SHE-STT-MTJ2 are connected with the STT-writing circuit, the T2 and T3 ends of the SHE-STT-MTJ1 and the T2 and T3 ends of the SHE-STT-MTJ2 are connected with the SHE-writing circuit, the T1 ends of the SHE-STT-MTJ1 and the SHE-STT-MTJ2 are respectively connected with the source electrodes of the N3 and N4 transistors, and the gate electrodes of the two NMOS transistors are directly interconnected and are controlled by a clk clock signal. The spin-hall-effect-assisted spin-transfer torque nonvolatile trigger provided by the invention has the characteristics of being low in consumption and high in speed and being reliable.

Description

technical field [0001] The invention relates to a spin-transfer torque non-volatile trigger assisted by spin Hall effect. It belongs to the field of microelectronic devices. Background technique [0002] In digital logic circuits, flip-flops (Flip-Flop) play a vital role. However, with the shrinking of process nodes, the leakage current caused by the quantum tunneling effect continues to increase, and electronic circuits based on traditional complementary metal-oxide-semiconductor (CMOS) transistors face the dual challenges of power consumption and reliability, making it difficult to meet the challenges of modern integration. circuit needs. Therefore, it is necessary to design a new type of flip-flop to solve these problems in order to continue the development of Moore's Law. [0003] In recent years, flip-flops based on some new types of non-volatile components have been emerging. Among them, the magnetic non-volatile flip-flop based on the spin transfer torque (Spin Tr...

AI Technical Summary

Problems solved by technology

[0004] (1) During the write operation of STT-MTJ, the write current needs to flow through the entire device. Since the resistance of the device itself is relatively large, the write power consumption of STT-MTJ is relatively large

[0005] (2) The read and write operations of STT-MTJ use the same branch. In order to avoid the breakdown of the oxide layer of STT-MTJ, the write current must be limited to a small value, which leads to a longer write time. Delay

[0006] (3) In the read operation, although the read current is usually smaller than the write current, it is still possible to cause an error flip to the state of the STT-MTJ, resulting in read disturbance

Images