Optical memristor based on metamaterials

A memristor and sheet-like technology, which is applied in the field of waveguide memristors, can solve the problems of memristors that have not been reported before, and achieve the effect of rich functions, low cost, and easy insertion and removal

Active Publication Date: 2017-10-31
TSINGHUA UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no photomemristive film that can be used in optical devices has been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical memristor based on metamaterials
  • Optical memristor based on metamaterials
  • Optical memristor based on metamaterials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The structure of the optical memristor obtained in this embodiment is as follows figure 1 As shown, it consists of 7 photomemristors 2 and filling medium 1;

[0031] Among them, seven memristors 2 are located in the filling medium 1;

[0032] The material constituting the photomemristor is calcium titanate particles with a particle size of 1 μm-2 μm, a dielectric constant of 110, and a dielectric loss tangent of 0.002;

[0033] The material constituting the filling medium is polytetrafluoroethylene, a material transparent to the frequency band used by the optical memristor;

[0034] Each photomemristor can be prepared as follows: Calcium titanate particles with a particle size of 1 μm-2 μm, a dielectric constant of 110, and a dielectric loss tangent of 0.002 are sintered at 1400 ° C, cooled to room temperature, and cut into lengths and widths A cube with a height of 2mm is obtained.

Embodiment 2

[0036] The optical memristor sheet obtained in this embodiment is composed of an optical memristor and a filling medium;

[0037] Wherein, the optical memristor is located in the filling medium.

[0038] The photomemristor is a copper ring body with a notch on the copper ring; the side length of the copper ring is 4mm, the width is 0.5mm, and the notch is 0.3mm. The gap part is equivalent to the capacitance C, and the other metal parts are equivalent to the inductance L;

[0039] The material constituting the filling medium is polytetrafluoroethylene which is transparent to the operating frequency band of the optical memristor.

Embodiment 3

[0041] The performance of the optical memristor sheet obtained in Examples 1 and 2 can be checked using a vector network analyzer,

[0042] The vector network analyzer has the functions of power sweep, time sweep and linear frequency sweep, and can well detect the performance of the prepared photomemristor.

[0043] Wherein, the photomemristive sheets obtained in Examples 1 and 2 all have the shape of figure 2 , image 3 , Figure 4 and Figure 5 the response to.

[0044] figure 2 The initial state of Zhongguang Memristor is a state of high transmittance. During the process of increasing the incident power, it undergoes a transition from high transmittance to low transmittance, and maintains this state of transmittance until a certain reverse power is applied. Reset from low transmittance to high transmittance. That is to say, as the incident field power increases, the transmittance of the photomemristor changes from high transmittance to low transmittance, and the sta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a waveguide optical memristor based on metamaterials. The optical memristor sheet includes an optical memristor and a filling medium; wherein, the optical memristor is located in the filling medium; the number of the optical memristor is at least one. The transmittance of the waveguide optical memristor sheet exhibits high and low transmittance changes under the loading of an electromagnetic field, and has a memory effect. The waveguide optical memristor can be used as an optical component, which makes the existing optical path design more functional, and enables optical products, such as vector network analyzers, to develop in a more functional direction, and is easy to insert Pick. The manufacturing method of the waveguide optical memristor is simple, the cost is low, and it has important application value.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and relates to a waveguide optical memristor based on metamaterials. Background technique [0002] The concept of the memristor was proposed by Leon Chua in 1971. It is named after the memory of the resistance of the element to the electricity passing through it. It is considered to be the fourth basic passive circuit element besides the resistance, capacitance and inductance. Its appearance is expected to improve the theory and application of the entire electronic circuit, and has great application potential in large-scale integrated circuits, non-volatile memory, and artificial neural networks. After the concept of memristor was proposed, it did not receive widespread attention until 2008 when Strukov of Hewlett-Packard Company et al. 2 Obvious memristive behavior was observed in memristors, and memristors have received widespread attention. Memristive phenomena have been observed in a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 周济吴红亚
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products