Manufacturing method of light-emitting diode

Abstract

The invention provides a manufacturing method of a light-emitting diode. The manufacturing method comprises the following steps of: (1) forming a light-emitting epitaxial structure on the surface of a growth substrate; (2) simultaneously etching an N electrode platform and a plurality of holes which are located between the N electrode platform and a P electrode in each light-emitting unit; (3) forming a plurality of cutting grooves in a tangent manner; (4) depositing SiO2 layers, and removing the SiO2 layer in each hole; (5) corroding to form a plurality of dislocation pits at the bottom of respective holes by using a chemical corrosion method, and simultaneously removing residues in each cutting groove; (6) forming the SiO2 layers again; (7) removing part of the SiO2 layers, and reserving the SiO2 layers at the bottom and the side wall of each hole and below the P electrode; (8) forming a current spreading layer; (9) preparing the P electrode and an N electrode. According to the manufacturing method, by forming the holes between the P electrode and the N electrode and further forming the dislocation pits at the bottoms of the holes, the current congestion of the light-emitting diode can be reduced, the current distribution uniformity is improved, and the luminous efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a method for manufacturing a light emitting diode. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes LEDs are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its core i...

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for manufacturing a light-emitting diode, which is used to solve the problems of current congestion, poor current distribution uniformity, and low light extraction efficiency of the light-emitting diode in the prior art.

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