A kind of light-emitting diode and its preparation method

A technology of light-emitting diodes and electrodes, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of current congestion, reduce the current expansion effect of light-emitting diodes, and achieve the effect of reducing current congestion and improving luminous efficiency.

Active Publication Date: 2019-09-27
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology

However, for light-emitting diodes with the electrode structure on the same side, the extended electrode of the first electrode is easily in the case of a large current. image 3 The position marked by the middle dotted line box produces a phenomenon of current crowding, thereby reducing the current spreading effect of the light-emitting diode of this structure

Method used

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  • A kind of light-emitting diode and its preparation method
  • A kind of light-emitting diode and its preparation method
  • A kind of light-emitting diode and its preparation method

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Embodiment Construction

[0056] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0057] The embodiment of the present application provides a light emitting diode, such as Figure 4 and Figure 5 shown, including:

[0058] substrate 300;

[0059] An epitaxial structure located on the surface of the substrate 300, the surface of the epitaxial structure is provided with a transparent conductive layer 900, and the epitaxial structure includes a buffer layer 400, an unintentionally doped layer 500, a second layer stacked on the surface of the substrate 300 in seque...

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Abstract

The present application discloses a light-emitting diode and a manufacturing method thereof, wherein the first-type conductive layer of the epitaxial structure of the light-emitting diode includes at least two sub-conductive layers, and a current blocking layer is arranged between every two sub-conductive layers, These sub-conductive layers and current blocking layers are stacked so that there is a certain height difference between the sub-conductive layers; in addition, the first electrode of the light-emitting diode includes a first-type extended electrode whose type matches the sub-conductive layer, and each type The first-type extended electrode is electrically connected to a sub-conductive layer through the groove, and because there is a certain height difference and resistance difference between the sub-conductive layers, and there is a certain current blocking effect, it can effectively guide the outflow of the first-type extended electrode. The larger range of lateral expansion of the current of the electrode is conducive to guiding the reasonable distribution of the current between the first-type extended electrode and the adjacent second-type extended electrode, thereby reducing the current crowding of the light-emitting diode, thereby improving the luminous efficiency of the light-emitting diode.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and more specifically, to a light emitting diode and a preparation method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED), also called an electroluminescent diode, is a core component of an LED lamp. With the rapid development of light-emitting diode technology, light-emitting diodes are more and more widely used in various fields. [0003] As the market has more and more stringent requirements on the luminous power of light-emitting diodes, the chip size of current mainstream light-emitting diodes has become larger and larger to meet the market's requirements for high luminous power of light-emitting diodes. However, a large-sized light-emitting diode chip will cause the problem of poor current spreading effect, so the structure of the chip is continuously optimized to solve this problem. At present, the mainstream large-size light-emi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/005H01L33/145H01L33/382H01L33/14H01L2933/0066H01L33/42H01L33/62
Inventor 林志伟陈凯轩李俊贤卓祥景吴奇隆
Owner XIAMEN CHANGELIGHT CO LTD
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