Organic electroluminescence device and preparation method thereof

An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of total reflection loss, low light extraction performance, poor refractive index, etc., and achieve the reduction of attenuation speed, Improve luminous efficiency and stabilize luminous color

Inactive Publication Date: 2015-05-27
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the rest will be consumed outside the device in other forms, and there is a difference in refractive index between the interfaces (such as between glass and ITO). The difference between the refractive index, the refractive index of glass is 1.5, ITO is 1.8, the light from ITO reaches the glass, and total reflection will occur), which causes the loss of total reflection, resulting in lower overall light extraction performance

Method used

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  • Organic electroluminescence device and preparation method thereof
  • Organic electroluminescence device and preparation method thereof
  • Organic electroluminescence device and preparation method thereof

Examples

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preparation example Construction

[0037] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:

[0038] Step S110 , preparing the scattering layer 20 on the surface of the glass substrate 10 by electron beam evaporation.

[0039] The scattering layer 20 is formed on one side surface of the glass substrate 10 . The scattering layer 20 is composed of a first luminescent material layer 201 , a metal oxide doped layer 202 and a second luminescent material layer 203 . The first luminescent material layer 201 is prepared on the surface of the glass substrate 10 by thermal resistance evaporation, and the metal oxide doped layer 202 is prepared on the surface of the first luminescent material layer 201 by electron beam evaporation. The metal oxide The material-doped layer 202 includes a first metal oxide and the second metal oxide doped in the first metal oxide, and the HOMO energy level of the first metal oxide is -5.2eV~-6.0 eV, the refractive inde...

Embodiment 1

[0059] The structure prepared in this example is glass substrate / Alq 3 / MoO 3 :ZrO 2 / Alq 3 / ITO / MoO 3 / NPB / Alq 3 / TAZ / CsF / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.

[0060] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. A scattering layer is prepared on a glass substrate. The scattering layer is composed of a first luminescent material layer, a metal oxide doped layer and a second luminescent material layer. The first luminescent material layer is prepared by thermal resistance evaporation on the surface of a glass substrate, and the material is Alq 3 , with a thickness of 45nm, a metal oxide doped layer was prepared on the surface of the first luminescent material layer by electron beam evaporation, and the material was MoO 3 :ZrO 2 , MoO 3 with ZrO 2 The mass ratio is 12:1, the thi...

Embodiment 2

[0068] The structure prepared in this example is glass substrate / DCJTB / WO 3 :MgO / ADN / IZO / MoO 3 / TCTA / ADN / Bphen / CsN 3 / Al organic electroluminescent devices.

[0069] The glass substrate is N-LAF36. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night to prepare a scattering layer on the glass substrate. The scattering layer consists of the first luminescent material layer, the metal oxide doped layer Composed with the second luminescent material layer, the first luminescent material layer is prepared by thermal resistance evaporation on the surface of the glass substrate. Layer, material is WO 3 : MgO, WO 3 The mass ratio to MgO is 10:1, the thickness is 300nm, and the second luminescent material layer is prepared by thermal resistance evaporation on the surface of the metal oxide doped layer, the material is ADN, and the thickness is 2nm. Then IZO is prepared on the scattering layer with a thickness of 80nm, which is pr...

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Abstract

The invention discloses an organic electroluminescence device which comprises a glass substrate, a scattering layer, an anode, a hole injection layer, a hole transmission layer, a light emitting layer, an electron transfer layer, an electron injection layer and a cathode which are overlapped in sequence, wherein the scattering layer consists of a first light emitting material layer, a metallic oxide doped layer and a second light emitting material layer; the first light emitting material layer and the second light emitting material layer are made of a same material selected from at least one of 4-(dinitrile methyl)-2-butyl-6-(1,1,7,7-tetramethyljulolidine-9-vinyl)-4H-pyran, 9,10-di-beta-naphthylene anthracene, 4,4'-di(9-ethyl-3-carbazole vinyl)-1,1'-biphenyl and 8-hydroxyquinoline aluminum; the metallic oxide doped layer comprises a first metallic oxide and a second metallic oxide doped in the first metallic oxide. The organic electroluminescence device disclosed by the invention is relatively high in light emission efficiency. The invention further provides a preparation method of the organic electroluminescence device.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy. [0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 周明杰黄辉张振华王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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